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Inventor

Masanori Ohashi

Inventor
Nagasaki, JP

Overview

19→
Patents
1994–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation42%
H10DInorganic electric semiconductor devices15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%
B41MPrinting, duplicating, marking, or copying processes3%
H01LSemiconductor devices3%
H04LTransmission of digital information, e.g. telegraphic communication3%
PatentTitleYear
9,620,545'Solid-state image pickup device and method for producing the same'20178,741,681'Solid-state image pickup device and method for producing the same'20148,652,864'Solid-state image pickup device and method for producing the same'20147,943,962'Solid-state image pickup device and method for producing the same'20117,898,000'Solid-state image pickup device and method for producing the same'20117,465,598'Solid-state imaging device and method for fabricating same'20087,420,234'Solid-state imaging device and method for fabricating same'20087,351,598'Solid-stage image pickup device and method for producing the same'20087,217,961'Solid-state image pickup device and method for producing the same'20076,551,910'Method of manufacturing solid-state image pickup device'20036,252,216'Solid state image pick-up device'20016,140,213'Semiconductor wafer and method of manufacturing same'20005,874,348'Semiconductor wafer and method of manufacturing same'19995,734,195'Semiconductor wafer for epitaxially grown devices having a sub-surface getter region'19985,581,099'CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic'19965,476,808'Method of making CCD solid state image sensing device'19955,401,699'Heat-sensitive recording material'19955,288,656'Method of manufacturing a CCD solid state image sensing device'19945,282,208'Data transfer system and method'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2014Patents assigned to SONY CORP (16)· patent assignee history
1994–2003Based in Kanagawa, JP· patent location history
1994Based in Hamamtsu, JP· patent location history
1995Based in Amagasaki, JP· patent location history
2007–2017Based in Nagasaki, JP· patent location history
2014Patents assigned to ABE HIDESHI (2)· patent assignee history
2014Patents assigned to FURUKAWA MASAKAZU (2)· patent assignee history
2014Patents assigned to MASAGAKI ATSUSHI (2)· patent assignee history
2014Patents assigned to OHASHI MASANORI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SONY CORP161994–2014
ABE HIDESHI22014
FURUKAWA MASAKAZU22014
MASAGAKI ATSUSHI22014
OHASHI MASANORIself22014
Locations
LocationPatentsSpan
Nagasaki, JP92007–2017
Kanagawa, JP81994–2003
Amagasaki, JP11995
Hamamtsu, JP11994