Inventor
MING-HUA YU
Inventor
TW
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10BElectronic memory devices5%
C23CCoating metallic material3%
C30BSingle-crystal growth3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
B23KSoldering or unsoldering1%
B82YSpecific uses or applications of nanostructures1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
12,486,597Apparatus and method for use with a substrate chamber202512,480,223Apparatus and method for use with a substrate chamber202512,464,752Method of forming shaped source/drain epitaxial layers of a semiconductor device202512,439,657Confined source/drain epitaxy regions and method forming same202512,426,358Semiconductor device having epitaxy source/drain regions202512,408,367Semiconductor device202512,389,649Transistors with stacked semiconductor layers as channels202512,369,342Increasing source/drain dopant concentration to reduced resistance202512,369,374Epitaxial growth methods and structures thereof202512,363,993Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same202512,266,687Semiconductor device and method202512,243,745Dynamic laser-assisted etching202512,154,974Source/drain formation with reduced selective loss defects202412,119,401Semiconductor device and methods of forming202412,075,607Semiconductor device202412,068,322Method of forming a multi-layer epitaxial source/drain region having varying concentrations of boron and germanium therein202412,062,710Increasing source/drain dopant concentration to reduced resistance202412,057,450Epitaxy regions with large landing areas for contact plugs202412,009,427Semiconductor device and manufacturing method thereof202412,002,875Semiconductor devices and methods of manufacture202411,948,971Confined source/drain epitaxy regions and method forming same202411,916,071Semiconductor device having epitaxy source/drain regions202411,908,742Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same202411,855,188Source/drain formation with reduced selective loss defects202311,830,934Increasing source/drain dopant concentration to reduced resistance202311,824,120Method of fabricating a source/drain recess in a semiconductor device202311,797,375System for debugging server startup sequence in debugging method applied in server202311,769,771FinFET device having flat-top epitaxial features and method of making the same202311,749,756Method for manufacturing semiconductor device202311,695,063Method of forming shaped source/drain epitaxial layers of a semiconductor device202311,688,807Semiconductor device and methods of forming202311,652,105Epitaxy regions with large landing areas for contact plugs202311,574,916Semiconductor device and manufacturing method thereof202311,569,084Method for manufacturing semiconductor structure with reduced nodule defects202311,532,731Semiconductor devices and methods of manufacture202211,489,074Semiconductor device and manufacturing method thereof202211,456,360Epitaxial growth methods and structures thereof202211,444,181Source/drain formation with reduced selective loss defects202211,355,500Static random access memory cell and manufacturing method thereof202211,315,837Semiconductor device and method202211,276,692Manufacturing method of integrated circuit202211,276,693FinFET device having flat-top epitaxial features and method of making the same202211,257,908Transistors with stacked semiconductor layers as channels202211,257,951Method of making semiconductor device having first and second epitaxial materials202211,211,477FinFETs having epitaxial capping layer on fin and methods for forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (44)· patent assignee history
2021–2025Based in TW· patent location history
2023Patents assigned to FULIAN PREC ELECTRONICS TIANJIN CO LTD (1)· patent assignee history
2023Based in CN· patent location history
2025Patents assigned to TAIWAN SEMICODUCTOR MFG CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 44 | 2021–2025 |
| FULIAN PREC ELECTRONICS TIANJIN CO LTD | 1 | 2023 |
| TAIWAN SEMICODUCTOR MFG CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 44 | 2021–2025 |
| CN | 1 | 2023 |