Inventor
Timothy Ashley
Inventor
Malvern, GB
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation13%
H10HInorganic light-emitting semiconductor devices having potential barriers13%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light5%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H04NPictorial communication, e.g. television5%
H10NElectric solid-state devices not otherwise provided for5%
B01LChemical or physical laboratory apparatus for general use3%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
8,450,771'Semiconductor device and fabrication method'20137,960,755'Strained quantum-well semiconductor devices'20117,639,950'Communications system'20097,619,265'Molecular single electron transistor (MSET) detector device'20096,850,013'Infrared light emitting diodes'20056,847,813'RF printed circuit board connector with through-hole leads'20056,809,514'Magnetic field sensor including carrier excluding for reducing an instrinsic contribution to carrier concentration in the active region'20046,624,451'High frequency field effect transistor with carrier extraction to reduce intrinsic conduction'20036,455,879'Low resistance contact semiconductor diode'20026,175,113'Thermal imaging system'20016,133,590'Low resistance contact semiconductor diode'20006,127,679'Thermal sensing system having a fast response calibration device'20006,091,069'Infrared optical system'20005,949,081'Dynamic infrared scene projector'19995,382,814'Semiconductor device with low thermally generated leakage current'19955,016,073'Photodetector semiconductor which does not require extensive cooling'19914,926,228'Photoconductive detector arranged for bias field concentration at the output bias contact'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2013Based in Malvern, GB· patent location history
1991–2001Patents assigned to SECR DEFENCE BRIT (6)· patent assignee history
1991Based in Malvern Link, GB· patent location history
1995Based in Worcester, GB· patent location history
2002–2013Patents assigned to QINETIQ LTD (8)· patent assignee history
2005Patents assigned to SAMSUNG ELECTRONICS CO LTD (1)· patent assignee history
2005Based in Allen, TX, US· patent location history
2009Based in Worcestershire, GB· patent location history
2013Patents assigned to ASHLEY TIMOTHY (1)· patent assignee history
2013Patents assigned to NASH GEOFFREY RICHARD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| QINETIQ LTD | 8 | 2002–2013 |
| SECR DEFENCE BRIT | 6 | 1991–2001 |
| ASHLEY TIMOTHYself | 1 | 2013 |
| NASH GEOFFREY RICHARD | 1 | 2013 |
| SAMSUNG ELECTRONICS CO LTD | 1 | 2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Malvern, GB | 13 | 1990–2013 |
| Worcestershire, GB | 1 | 2009 |
| Allen, Texas, US | 1 | 2005 |
| Worcester, GB | 1 | 1995 |
| Malvern Link, GB | 1 | 1991 |