Inventor
Eric W. Singleton
Inventor
Maple Plain, MN, US
Overview
Patents· 79 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer37%
G01RMeasuring electric variables15%
Y10TTechnical subjects covered by former us classification11%
H01FMagnets10%
B82YSpecific uses or applications of nanostructures9%
H10NElectric solid-state devices not otherwise provided for6%
H01LSemiconductor devices4%
C23CCoating metallic material2%
C21DModifying the physical structure of ferrous metals1%
G11CStatic stores1%
PatentTitleYear
11,120,933Stack cap with a non-magnetic layer including ferromagnetic elements202110,211,034Fabrication of a multi-layered magnetic element201910,147,447Magnetic element with reduced shield-to-shield spacing201810,090,008Magnetoresistive sensor fabrication201810,054,649Method for fabricating a magnetic sensor assembly20189,928,857'Method of making a bottom shield stabilized magnetic seed layer'20189,890,449'Methods of forming MgO barrier layer'20189,870,791'Stabilization of one or more upper sensors in multi-sensor readers'20189,856,557'Fabrication of a multi-layered magnetic element'20189,761,279'Magnetic stack including cooling element'20179,720,053'Magnetic sensor annealing using a rocking field'20179,704,517'Magnetoresistive sensor with SAF structure having amorphous alloy layer'20179,685,178'Lateral spin valve reader with large-area tunneling spin-injector'20179,685,177'Sensor stabilization in a multiple sensor magnetic reproducing device'20179,664,572'Thin films having large temperature coefficient of resistance and methods of fabricating same'20179,659,585'Magnetic sensor seed layer with magnetic and nonmagnetic layers'20179,646,635'Magnetoresistive sensor'20179,633,679'Sensor stack structure with RKKY coupling layer between free layer and capping layer'20179,632,149'Magnetic layer with grain refining agent'20179,607,634'Magnetic stack including cooling element'20179,552,834'Stabilization of one or more upper sensors in multi-sensor readers'20179,542,961'Magnetoresistive sensor with stop-layers'20179,536,549'Multiple sensor magnetic reproducing device with reduced inter-sensor spacing'20179,454,978'Sensor structure having increased thermal stability'20169,442,171'Magnetic sensing device with reduced shield-to-shield spacing'20169,437,224'Stack with wide seed layer'20169,401,163'Multi-stack reader with split middle shield'20169,396,745'Multi-sensor reader with different readback sensitivities'20169,384,762'Spin transport sensor'20169,361,910'Leads coupled to top and bottom reader stacks of a reader'20169,305,578'Magnetic element with reduced shield-to-shield spacing'20169,269,379'Magnetic stack including cooling element'20169,251,815'Magnetoresistive sensor with AFM-stabilized bottom shield'20169,230,575'Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer'20169,196,272'Sensor structure having increased thermal stability'20159,171,559'Sensor structure with pinned stabilization layer'20159,165,570'Data reader with magnetic seed lamination'20159,147,409'Magnetic sensor annealing using a rocking field'20159,121,886'Magnetoresistive sensor including an amorphous insertion layer excluding glass former elements'20159,087,535'Spin transport sensor'20159,070,382'Side shield pedestal for data readers'20159,030,782'Data reader side shields with polish stop'20159,017,832'Magnetic element electrode lamination'20159,001,472'Shield stabilization configuration with applied bias'20158,995,096'Magnetic element side shield with diffusion barrier'20158,947,834'Method and apparatus for chemical-mechanical polishing'20158,932,667'Hard magnet with cap and seed layers and data storage device read/write head incorporating the same'20158,922,950'Multi-layer magnetoresistive shield with transition metal layer'20148,922,951'Data storage device with variable anisotropy side shield'20148,891,204'Biasing structure for write element domain control in a magnetic writer'20148,885,300'Magnetic element with a bi-layer side shield'20148,822,046'Stack with wide seed layer'20148,771,847'Reader stop-layers'20148,760,820'Magnetic element with coupled side shield'20148,711,525'Magnetoresistive shield with coupled lateral magnet bias'20148,659,854'Magnetoresistive shield with stabilizing feature'20148,632,897'Multilayer hard magnet and data storage device read/write head incorporating the same'20148,582,252'Magnetic layer with grain refining agent'20138,580,580'Magnetic element with varying areal extents'20138,582,249'Magnetic element with reduced shield-to-shield spacing'20138,531,802'Magnetic structure free layer stabilization'20138,472,147'Magnetoresistive shield with lateral sub-magnets'20138,320,075'Biasing structure for write element domain control in a magnetic writer'20128,248,737'Magnetic sensor including an element for generating signals related to resistance changes'20128,194,360'Domain control in bottom shield of MR sensor'20127,719,802'Magnetic sensor with electrically defined active area dimensions'20107,369,360'Perpendicular recording head having controlled permeability and saturation moment'20087,183,893'TMR sensor with oxidized alloy barrier layer and method for forming the same'20077,177,122'Biasing for tri-layer magnetoresistive sensors'20077,061,731'High magnetic anisotropy hard magnetic bias element'20067,035,061'Magnetoresistive transducer with low magnetic moment, high coercivity stabilizing magnets'20066,954,343'Magnetoresistive sensor having low resistivity dual path conductor and optimized magnetic'20056,930,865'Magnetoresistive read sensor with short permanent magnets'20056,818,330'Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers'20046,795,279'Spin valve structures with specular reflection layers'20046,791,805'Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons'20046,700,753'Spin valve structures with specular reflection layers'20046,683,761'Magnetoresistive sensor with laminate electrical interconnect'20046,490,140'Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2021Patents assigned to SEAGATE TECHNOLOGY LLC (78)· patent assignee history
2002–2005Based in Greenfield, MN, US· patent location history
2004–2021Based in Maple Plain, MN, US· patent location history
2012–2017Patents assigned to SINGLETON ERIC WALTER (11)· patent assignee history
2012–2016Patents assigned to SINGLETON ERIC W (7)· patent assignee history
2013–2017Patents assigned to YI JAE-YOUNG (7)· patent assignee history
2014–2016Patents assigned to MCKINLAY SHAUN ERIC (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEAGATE TECHNOLOGY LLC | 78 | 2002–2021 |
| SINGLETON ERIC WALTERself | 11 | 2012–2017 |
| SINGLETON ERIC Wself | 7 | 2012–2016 |
| YI JAE-YOUNG | 7 | 2013–2017 |
| MCKINLAY SHAUN ERIC | 4 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Maple Plain, Minnesota, US | 73 | 2004–2021 |
| Greenfield, Minnesota, US | 6 | 2002–2005 |