Inventor
CHENG HUNG LEE
Inventor
TW
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores39%
G06FElectric digital data processing13%
H10DInorganic electric semiconductor devices10%
H10BElectronic memory devices8%
H01LSemiconductor devices5%
H03KPulse technique5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
E06BFixed or movable closures for openings in buildings, vehicles, fences or like enclosures in general, e.g. doors, windows, blinds, gates3%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use3%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses2%
PatentTitleYear
12,573,467Sense amplifier and output latch circuit for testing202612,562,197Header circuit placement in memory device202612,538,614Light-emitting device and manufacturing method for making the same202612,503,913Blind lifting device and a blind lifting control module thereof202512,499,934Memory device and method of operating the same202512,445,312I/O circuit design for SRAM-based PUF generators202512,400,723Latch type sense amplifier for testing202512,400,708Memory device and method for reducing active power consumption thereof using address control202512,380,945Memory device with word line pulse recovery202512,354,647Memory device sense amplifier control202512,347,483Arrangements of memory devices and methods of operating the memory devices202512,340,871Memory circuits with dynamically adjustable pulse widths and methods for operating the same202512,322,438Latch circuit formed by modified memory cells202512,300,605Reducing internal node loading in combination circuits202512,249,391Latch type sense amplifier202512,244,311Power loss regulation circuit202512,205,664Memory circuit and method of operating same202512,183,417Memory device and manufacturing method of the same202412,170,125Memory device and electronic device202412,110,741Mechanical multiple torque damping device for a horizontal spindle202412,094,529Was cell for SRAM high-R issue in advanced technology node202412,072,750Power management circuit, system-on-chip device, and method of power management202411,949,799I/O circuit design for SRAM-based PUF generators202411,927,058Blind lifting device and a blind lifting control module thereof202411,923,034Header circuit placement in memory device202411,915,746Memory device with word line pulse recovery202411,915,743Latch circuit202411,869,623Latch type sense amplifier202411,854,970Reducing internal node loading in combination circuits202311,817,144Arrangements of memory devices and methods of operating the memory devices202311,756,608Write assist cell for static random access memory202311,756,647Memory device and electronic device202311,726,539Power management circuit, system-on-chip device, and method of power management202311,728,789Voltage supply selection circuit202311,723,195Semiconductor device having an inter-layer via (ILV), and method of making same202311,682,453Word line pulse width control circuit in static random access memory202311,677,387Clock circuit and method of operating the same202311,675,505Configurable memory storage system202311,651,804Memory macro and method of operating the same202311,551,747Computation apparatus and method using the same202311,538,507Header circuit placement in memory device202211,514,952Memory device with strap cells202211,450,605Reducing internal node loading in combination circuits202211,444,608Level shifter202211,367,507Memory device and electronic device202211,355,183Memory device with word line pulse recovery202211,323,101Clock circuit and method of operating the same202211,301,148Configurable memory storage system202211,264,066Leakage pathway prevention in a memory storage device202211,264,081Memory circuit, electronic device having the memory circuit, and method of operating memory circuit202211,238,908Memory circuit and method of operating same202211,138,359Method of fabricating a semiconductor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (48)· patent assignee history
2021–2026Based in TW· patent location history
2022Patents assigned to AIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
2022Patents assigned to TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD (1)· patent assignee history
2024–2025Patents assigned to SYNCPROTO CO LTD (3)· patent assignee history
2026Patents assigned to ANHUI SANAN OPTOELECTRONICS CO LTD (1)· patent assignee history
2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 48 | 2021–2026 |
| SYNCPROTO CO LTD | 3 | 2024–2025 |
| AIWAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2022 |
| ANHUI SANAN OPTOELECTRONICS CO LTD | 1 | 2026 |
| TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 51 | 2021–2026 |
| CN | 1 | 2026 |