Inventor
David Hemker
Inventor
San Jose, CA, US
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H01JElectric discharge tubes or discharge lamps7%
B24BMachines, devices, or processes for grinding or polishing6%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices6%
H01LSemiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
G01BMeasuring length, thickness or similar linear dimensions4%
B08BCleaning in general4%
G05BControl or regulating systems in general4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,794,519Additively manufactured gas distribution manifold202010,747,210System and method for automating user interaction for semiconductor manufacturing equipment202010,215,317Additively manufactured gas distribution manifold20199,871,759'Social network service for semiconductor manufacturing equipment and users'20189,431,268'Isotropic atomic layer etch for silicon and germanium oxides'20169,117,860'Controlled ambient system for interface engineering'20159,076,844'Process integration scheme to lower overall dielectric constant in BEoL interconnect structures'20158,114,246'Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same'20127,749,689'Methods for providing a confined liquid for immersion lithography'20107,520,284'Apparatus for developing photoresist and method for operating the same'20097,367,345'Apparatus and method for providing a confined liquid for immersion lithography'20087,356,580'Plug and play sensor integration for a process module'20087,309,618'Method and apparatus for real time metal film thickness measurement'20077,105,102'Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same'20067,084,621'Enhancement of eddy current based measurement capabilities'20067,045,019'Method for performing site-specific backside particle and contamination removal'20067,029,368'Apparatus for controlling wafer temperature in chemical mechanical polishing'20067,010,468'Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection'20066,984,162'Apparatus methods for controlling wafer temperature in chemical mechanical polishing'20066,951,624'Method and apparatus of arrayed sensors for metrological control'20056,939,796'System, method and apparatus for improved global dual-damascene planarization'20056,937,915'Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control'20056,929,531'System and method for metal residue detection and mapping within a multi-step sequence'20056,925,348'Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control'20056,922,053'Complementary sensors metrological process and method and apparatus for implementing the same'20056,894,491'Method and apparatus for metrological process control implementing complementary sensors'20056,859,765'Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection'20056,821,899'System, method and apparatus for improved local dual-damascene planarization'20046,808,590'Method and apparatus of arrayed sensors for metrological control'20046,759,336'Methods for reducing contamination of semiconductor substrates'20046,736,720'Apparatus and methods for controlling wafer temperature in chemical mechanical polishing'20046,716,303'Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same'20046,528,427'Methods for reducing contamination of semiconductor substrates'20036,527,911'Configurable plasma volume etch chamber'20036,341,574'Plasma processing systems'20025,160,407'Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history
1992Based in Sunnyvale, CA, US· patent location history
2002–2020Patents assigned to LAM RES CORP (35)· patent assignee history
2002–2020Based in San Jose, CA, US· patent location history
2012–2015Patents assigned to HEMKER DAVID (3)· patent assignee history
2015Patents assigned to DORDI YEZDI (2)· patent assignee history
2015Patents assigned to REDEKER FRITZ C (2)· patent assignee history
2018Based in Fremont, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LAM RES CORP | 35 | 2002–2020 |
| HEMKER DAVIDself | 3 | 2012–2015 |
| DORDI YEZDI | 2 | 2015 |
| REDEKER FRITZ C | 2 | 2015 |
| APPLIED MATERIALS INC | 1 | 1992 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 34 | 2002–2020 |
| Fremont, California, US | 1 | 2018 |
| Sunnyvale, California, US | 1 | 1992 |