LexDanaLexDanabeta
Inventor

Cherng-Chyi Han

Inventor
San Jose, CA, US

Overview

119→
Patents
1997–2021
Patent span
Physics
Primary field (CPC G)

Patents· 119 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer40%
Y10TTechnical subjects covered by former us classification27%
B82YSpecific uses or applications of nanostructures16%
G01RMeasuring electric variables6%
H10NElectric solid-state devices not otherwise provided for3%
H01FMagnets3%
C23CCoating metallic material1%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers1%
H10BElectronic memory devices1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
11,011,192Method of building self-aligned optical side shield structure202110,586,560Rhodium film with thin template layer and its application to a thermally assisted magnetic recording (TAMR) writer202010,262,683Self-aligned hybrid Au--Rh near field transducer for enhanced reliability201910,186,288Method of fabricating single Rh layer optical field enhancer with pre-focusing structures201910,152,991Method for manufacturing thermally-assisted magnetic recording head with waveguide blocker20189,852,752Plasmon generator with metallic waveguide blocker for TAMR20179,337,414'Reader sensor structure and its method of construction'20168,865,008'Two step method to fabricate small dimension devices for magnetic recording applications'20148,842,389'Wrap-around shielded writer with highly homogeneous shield material'20148,784,674'Method of making a PMR writer with graded side shield'20148,728,333'Method to fabricate small dimension devices for magnetic recording applications'20148,614,860'PMR head with integrated side shield (ISS)'20138,611,046'PMR writer with graded side shield'20138,472,138'Self-aligned full side shield PMR and method to make it'20138,379,347'Perpendicular shield pole writer with tapered main pole and tapered non-magnetic top shaping layer'20138,305,711'Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer'20128,238,056'Perpendicular shield pole writer with tapered main pole and tapered non-magnetic top shaping layer'20128,209,848'Method of making a PMR writer with seamless shields'20128,189,295'Perpendicular magnetic recording head with a bottom side shield'20128,184,399'Magnetic write head with thin and thick portions for balancing writability and ate'20128,173,028'Method of manufacturing magnetic head for perpendicular magnetic recording including two side shields'20128,118,990'Electroplated magnetic film for read-write applications'20128,117,738'Method to make a perpendicular magnetic recording head with a side write shield'20128,056,213'Method to make PMR head with integrated side shield (ISS)'20117,979,978'Method for manufacturing a self-aligned full side shield PMR'20117,978,431'Method to make a perpendicular magnetic recording head with a bottom side shield'20117,978,440'Seed/AFM combination for CCP GMR device'20117,898,773'Perpendicular magnetic recording head with a side write shield'20117,773,341'Laminated film for head applications'20107,751,146'Abs through aggressive stitching'20107,701,666'Perpendicular magnetic recording write head with a self aligned stitched write shield'20107,657,992'Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield'20107,646,568'Ultra thin seed layer for CPP or TMR structure'20107,631,418'Process to form an ABS through aggressive stitching'20097,529,067'Exchange bias structure for abutted junction GMR sensor'20097,400,475'Patterned, synthetic longitudinally exchange biased GMR sensor'20087,390,529'Free layer for CPP GMR having iron rich NiFe'20087,382,577'Magnetic write head having a wider trailing edge pole structure'20087,359,150'Self-aligned trimmed pole'20087,335,960'MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture'20087,331,100'Process of manufacturing a seed/AFM combination for a CPP GMR device'20087,320,168'Method to improve heat dissipation in a magnetic shield'20087,307,815'Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield'20077,293,344'Process of making CD uniformity in high track density recording head'20077,268,975'High data rate writer with low resistance coil and short yoke'20077,251,102'ABS through aggressive stitching'20077,221,539'Stitched shielded pole structure for a perpendicular magnetic recording write head'20077,196,876'Method to make abutted junction GMR head without lead shunting'20077,193,814'Pole piece for high track density recording'20077,152,304'Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor'20067,154,708'Thermal protrusion reduction in magnet heads by utilizing a heat-spreading pad'20067,146,711'Method to make planarized GMR head for high track density'20067,134,186'Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor'20067,126,789'Low DC coil resistance planar writer'20067,120,989'Process of manufacturing a perpendicular magnetic pole structure'20067,116,518'Short yoke length planar writer with low DC coil resistance'20067,106,558'Biased spin valve head with canted adjacent layer and current channeling layer'20067,099,125'Easily manufactured exchange bias stabilization scheme'20067,061,730'Robust hard bias/conductor lead structures for future GMR heads'20067,047,625'Planarizing process'20067,050,273'Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon'20067,038,880'Method to make a planar writer with low D.C. coil resistance'20067,035,060'Easily manufactured exchange bias stabilization scheme'20067,022,383'Exchange bias structure for abutted junction GMR sensor'20067,016,165'Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication'20067,012,789'Composite shared pole design for magnetoresistive merged heads'20066,969,895'MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture'20056,960,281'Method to make a wider trailing pole structure by self-aligned pole trim process'20056,928,721'Method of manufacturing a magnetic read/write head and slider assembly'20056,929,958'Method to make small isolated features with pseudo-planarization for TMR and MRAM applications'20056,887,355'Self-aligned pole trim process'20056,879,474'Junction stability and yield for spin valve heads'20056,857,180'Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor'20056,851,178'Process of manufacturing a magnetic write head'20056,826,015'Flux concentrating stitched write head'20046,785,954'Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor'20046,776,883'Process of manufacturing a magnetic read head'20046,668,443'Process for manufacturing a spin valve recording head'20036,663,920'Ion implantation method for fabricating magnetoresistive (MR) sensor element'20036,632,474'Robust hard bias/conductor lead structures for future GMR heads'20036,608,737'Method to make a stitched writer for a giant magneto-resistive head'20036,596,468'Process to form a flux concentration stitched write head'20036,591,480'Process for fabricating a flux concentrating stitched head'20036,583,966'Method to make a high data rate stitched writer for a giant magneto-resistive head'20036,556,377'Stitched write head design having a sunken shared pole'20036,524,491'Double plate-up process for fabrication of composite magnetoresistive shared poles'20036,504,677'Multi-layer stitched write head design for high data rate application'20036,496,333'Dual stripe magnetoresistive (DSMR) head with co-extensive magnetoresistive (MR)/dielectric/magnetoresistive (MR) stack layer edges'20026,493,926'Bi-layer lift-off process for high track density GMR head'20026,469,874'Method to make a stitched writer for a giant magneto-resistive head'20026,469,875'Stitched write head design having a sunken shared pole'20026,449,131'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'20026,415,500'Method to prevent electrostatic discharge for MR/GMR wafer fabrication'20026,416,677'Narrow track stitched GMR head'20026,393,692'Method of manufacture of a composite shared pole design for magnetoresistive merged heads'20026,383,574'Ion implantation method for fabricating magnetoresistive (MR) sensor element'20026,373,667'Single stripe magnetoresistive (MR) head'20026,367,146'Photoresist frame plating method for forming planarized magnetic pole layer'20026,358,635'Magnetic recording sensor with stabilizing shield'20026,345,435'Method to make laminated yoke for high data rate giant magneto-resistive head'20026,322,640'Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element'20016,307,721'Thin read gap magnetoresistive (MR) sensor element and method for fabrication thereof'20016,306,311'Method to make a high data rate stitched writer for a giant magneto-resistive head'20016,287,476'Electrochemical method to improve MR reader edge definition and device reliability'20016,274,025'Chemical approach to develop lift-off photoresist structure and passivate MR sensor'20016,243,939'High ion beam etch selectivity for partial pole trim application'20016,230,390'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'20016,129,957'Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications'20006,103,136'Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)'20006,091,589'Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'20006,024,886'Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording'20006,007,731'Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19996,003,223'Common alignment target image field stitching method for step and repeat alignment in photoresist'19995,985,162'Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19995,920,980'Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19995,878,481'Pole trimming method for fabricating a magnetic transducer structure'19995,874,010'Pole trimming technique for high data rate thin film heads'19995,783,460'Method of making self-aligned dual stripe magnetoresistive (DRMR) head for high density recording'19985,684,658'High track density dual stripe magnetoresistive (DSMR) head'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2016Patents assigned to HEADWAY TECHNOLOGIES INC (113)· patent assignee history
1997–2021Based in San Jose, CA, US· patent location history
2010Based in Milpitas, CA, US· patent location history
2011–2013Patents assigned to HAN CHERNG-CHYI (13)· patent assignee history
2011–2014Patents assigned to DOVEK MORIS (8)· patent assignee history
2012–2014Patents assigned to LI MIN (6)· patent assignee history
2017–2021Patents assigned to HEADWAY TECH INC (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HEADWAY TECHNOLOGIES INC1131997–2016
HAN CHERNG-CHYIself132011–2013
DOVEK MORIS82011–2014
HEADWAY TECH INC62017–2021
LI MIN62012–2014
Locations
LocationPatentsSpan
San Jose, California, US1181997–2021
Milpitas, California, US12010