Inventor
Matt Yeh
Inventor
Hsinchun, TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices58%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H01LSemiconductor devices8%
H10BElectronic memory devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
9,362,124'Method of patterning a metal gate of semiconductor device'20168,993,452'Method of patterning a metal gate of semiconductor device'20158,980,706'Double treatment on hard mask for gate N/P patterning'20158,658,525'Methods for a gate replacement process'20148,569,185'Method of fabricating gate electrode using a treated hard mask'20138,415,254'Method for removing dummy poly in a gate last process'20138,367,563'Methods for a gate replacement process'20138,361,855'Method for fabricating a gate structure'20138,361,848'Precise resistor on a semiconductor device'20138,357,617'Method of patterning a metal gate of semiconductor device'20138,334,197'Method of fabricating high-k/metal gate device'20128,329,546'Modified profile gate structure for semiconductor device and methods of forming thereof'20128,268,085'Methods for forming metal gate transistors'20128,222,132'Fabricating high-K/metal gate devices in a gate last process'20128,173,504'Method of fabricating gate electrode using a treated hard mask'20128,114,721'Method of controlling gate thickness in forming FinFET devices'20128,110,490'Gate oxide leakage reduction'20128,048,733'Method for fabricating a gate structure'20117,915,105'Method for patterning a metal gate'20117,732,344'High selectivity etching process for metal gate N/P patterning'20107,727,900'Surface preparation for gate oxide formation that avoids chemical oxide formation'20107,713,854'Gate dielectric layers and methods of fabricating gate dielectric layers'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (22)· patent assignee history
2010–2016Based in Hsinchun, TW· patent location history
2010–2013Based in Hsinchu, TW· patent location history
2012–2015Patents assigned to YEH MATT (14)· patent assignee history
2012–2013Patents assigned to LEE DA-YUAN (6)· patent assignee history
2012–2013Patents assigned to OUYANG HUI (6)· patent assignee history
2012–2013Patents assigned to LIN SHUN WU (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 22 | 2010–2016 |
| YEH MATTself | 14 | 2012–2015 |
| LEE DA-YUAN | 6 | 2012–2013 |
| OUYANG HUI | 6 | 2012–2013 |
| LIN SHUN WU | 5 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchun, TW | 17 | 2010–2016 |
| Hsinchu, TW | 5 | 2010–2013 |