Inventor
Yuri V. Melnik
Inventor
Rockville, MD, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
Y10TTechnical subjects covered by former us classification8%
Y02PClimate change mitigation technologies in the production or processing of goods2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry1%
PatentTitleYear
8,372,199'Bulk GaN and AlGaN single crystals'20138,092,597'Method and apparatus for fabricating crack-free Group III nitride semiconductor materials'20128,092,596'Bulk GaN and AlGaN single crystals'20127,611,586'Reactor for extended duration growth of gallium containing single crystals'20097,556,688'Method for achieving low defect density AlGaN single crystal boules'20097,501,023'Method and apparatus for fabricating crack-free Group III nitride semiconductor materials'20097,279,047'Reactor for extended duration growth of gallium containing single crystals'20077,157,058'High power ultrasonic reactor for sonochemical applications'20076,955,719'Manufacturing methods for semiconductor devices with multiple III-V material layers'20056,936,357'Bulk GaN and ALGaN single crystals'20056,849,862'III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer'20056,656,285'Reactor for extended duration growth of gallium containing single crystals'20036,616,757'Method for achieving low defect density GaN single crystal boules'20036,613,143'Method for fabricating bulk GaN single crystals'20036,599,133'Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques'20036,576,054'Method for fabricating bulk AlGaN single crystals'20036,559,038'Method for growing p-n heterojunction-based structures utilizing HVPE techniques'20036,559,467'P-n heterojunction-based structures utilizing HVPE grown III-V compound layers'20036,555,452'Method for growing p-type III-V compound material utilizing HVPE techniques'20036,479,839'III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer'20026,476,420'P-N homojunction-based structures utilizing HVPE growth III-V compound layers'20026,472,300'Method for growing p-n homojunction-based structures utilizing HVPE techniques'20026,218,269'Process for producing III-V nitride pn junctions and p-i-n junctions'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2005Based in St. Petersburg, RU· patent location history
2002–2009Patents assigned to TECHNOLOGIES AND DEVICES INTER (15)· patent assignee history
2003–2013Based in Rockville, MD, US· patent location history
2003Based in St-Petersburg, RU· patent location history
2007Based in Alberta, CA· patent location history
2009–2013Patents assigned to FREIBERGER COMPOUND MAT GMBH (4)· patent assignee history
2012–2013Patents assigned to DMITRIEV VLADIMIR A (3)· patent assignee history
2012–2013Patents assigned to MELNIK YURI V (3)· patent assignee history
2012–2013Patents assigned to IVANTSOV VLADIMIR (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TECHNOLOGIES AND DEVICES INTER | 15 | 2002–2009 |
| FREIBERGER COMPOUND MAT GMBH | 4 | 2009–2013 |
| DMITRIEV VLADIMIR A | 3 | 2012–2013 |
| MELNIK YURI Vself | 3 | 2012–2013 |
| IVANTSOV VLADIMIR | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Rockville, Maryland, US | 13 | 2003–2013 |
| St. Petersburg, RU | 8 | 2001–2005 |
| Alberta, CA | 1 | 2007 |
| St-Petersburg, RU | 1 | 2003 |