Inventor
Akinori Seki
Inventor
Shizuoka, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light16%
C30BSingle-crystal growth13%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H01JElectric discharge tubes or discharge lamps4%
H01LSemiconductor devices4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
C23CCoating metallic material2%
PatentTitleYear
9,903,047'Production method of SiC crystal'20189,873,955Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid20189,587,327'Method of production of sic single crystal'20179,508,802'Gettering process for producing semiconductor device'20169,157,171'Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of same'20158,716,121'Ohmic electrode and method of forming the same'20148,633,101'Semiconductor device and manufacturing method of semiconductor device'20148,470,698'Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal'20138,399,888'P-type SiC semiconductor'20138,338,833'Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same'20128,053,784'Silicon carbide semiconductor device and method for manufacturing the same'20118,008,180'Method of forming an OHMIC contact on a P-type 4H-SIC substrate'20117,879,705'Semiconductor devices and manufacturing method thereof'20117,678,671'Method of forming epitaxial SiC using XPS characterization'20105,994,725'MOSFET having Schottky gate and bipolar device'19995,773,334'Method of manufacturing a semiconductor device'19985,604,761'Layered semiconductor laser having solder laminations and method of making same'19975,553,089'Semiconductor laser stack with lens and method of manufacturing the same'19965,491,106'Method for growing a compound semiconductor and a method for producing a semiconductor laser'19965,452,316'Semiconductor laser having stacked active layers with reduced drive voltage'19955,365,536'Semiconductor laser'19945,111,470'Semiconductor laser device and a method of fabricating the same'19925,070,510'Semiconductor laser device'19915,016,065'Compound semiconductor substrate with InGaP layer'19915,011,550'Laminated structure of compound semiconductors'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1996Patents assigned to SHARP KK (5)· patent assignee history
1991Based in Nara, JP· patent location history
1992–1999Based in Toyota, JP· patent location history
1994–2018Patents assigned to TOYOTA MOTOR CO LTD (20)· patent assignee history
2010–2018Patents assigned to JAPAN FINE CERAMICS CT (4)· patent assignee history
2010–2018Based in Shizuoka, JP· patent location history
2012–2017Patents assigned to SEKI AKINORI (8)· patent assignee history
2013–2017Patents assigned to SAITOH HIROAKI (3)· patent assignee history
2014Based in Sunto-gun, JP· patent location history
2018Based in Nishikamo-gun, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYOTA MOTOR CO LTD | 20 | 1994–2018 |
| SEKI AKINORIself | 8 | 2012–2017 |
| SHARP KK | 5 | 1991–1996 |
| JAPAN FINE CERAMICS CT | 4 | 2010–2018 |
| SAITOH HIROAKI | 3 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shizuoka, JP | 12 | 2010–2018 |
| Toyota, JP | 8 | 1992–1999 |
| Nara, JP | 2 | 1991 |
| Nishikamo-gun, JP | 1 | 2018 |
| Sunto-gun, JP | 1 | 2014 |