Inventor
Rakesh K. Lal
Inventor
Isla Vista, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H03KPulse technique4%
Y10TTechnical subjects covered by former us classification4%
C25BElectrolytic or electrophoretic processes for the production of compounds or non-metals1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
11,121,216III-nitride devices including a graded depleting layer202110,756,207Lateral III-nitride devices including a vertical gate module202010,629,681III-nitride devices including a graded depleting layer202010,535,763Enhancement-mode III-nitride devices202010,224,401III-nitride devices including a graded depleting layer201910,199,217Methods of forming reverse side engineered III-nitride devices201910,043,898Enhancement-mode III-nitride devices201810,043,896III-Nitride transistor including a III-N depleting layer20189,935,190Forming enhancement mode III-nitride devices20189,842,922'III-nitride transistor including a p-type depleting layer'20179,590,060'Enhancement-mode III-nitride devices'20179,496,137'Methods of forming reverse side engineered III-nitride devices'20169,443,938'III-nitride transistor including a p-type depleting layer'20169,318,593'Forming enhancement mode III-nitride devices'20169,224,671'III-N device structures and methods'20159,171,836'Method of forming electronic components with increased reliability'20159,087,718'Enhancement-mode III-nitride devices'20158,895,421'III-N device structures and methods'20148,860,495'Method of forming electronic components with increased reliability'20148,643,062'III-N device structures and methods'20148,598,937'High power semiconductor electronic components with increased reliability'20138,389,977'Reverse side engineered III-nitride devices'20138,147,659'Gated electrodes for electrolysis and electrosynthesis'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2014Patents assigned to LAL RAKESH K (4)· patent assignee history
2012–2021Based in Isla Vista, CA, US· patent location history
2013–2020Patents assigned to TRANSPHORM INC (20)· patent assignee history
2013–2014Patents assigned to MISHRA UMESH (3)· patent assignee history
2013–2014Patents assigned to DORA YUVARAJ (2)· patent assignee history
2013–2014Patents assigned to FICHTENBAUM NICHOLAS (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TRANSPHORM INC | 20 | 2013–2020 |
| LAL RAKESH Kself | 4 | 2012–2014 |
| MISHRA UMESH | 3 | 2013–2014 |
| DORA YUVARAJ | 2 | 2013–2014 |
| FICHTENBAUM NICHOLAS | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Isla Vista, California, US | 23 | 2012–2021 |