LexDanaLexDanabeta
Inventor

Qiuqun Qi

Inventor
Fremont, CA, US

Overview

8→
Patents
2003–2021
Patent span
Physics
Primary field (CPC G)

Patents· 8 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores70%
G06FElectric digital data processing10%
H04MTelephonic communication10%
H05KPrinted circuits10%
PatentTitleYear
10,952,356Shielding portions of an electronic device20216,834,010'Temperature dependent write current source for magnetic tunnel junction MRAM'20046,721,203'Designs of reference cells for magnetic tunnel junction (MTJ) MRAM'20046,697,294'Designs of reference cells for magnetic tunnel junction (MTJ) MRAM'20046,687,178'Temperature dependent write current source for magnetic tunnel junction MRAM'20046,680,863'MRAM memory array having merged word lines'20046,552,928'Read-write control circuit for magnetic tunnel junction MRAM'20036,512,690'High sensitivity common source amplifier MRAM cell, memory array and read/write scheme'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003Patents assigned to READ RITE CORP (2)· patent assignee history
2003–2004Based in Fremont, CA, US· patent location history
2004Patents assigned to WESTERN DIGITAL FREMONT INC (5)· patent assignee history
2021Patents assigned to GOOGLE LLC (1)· patent assignee history
2021Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
WESTERN DIGITAL FREMONT INC52004
READ RITE CORP22003
GOOGLE LLC12021
Locations
LocationPatentsSpan
Fremont, California, US72003–2004
San Jose, California, US12021