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Inventor

Paolo Bonfanti

Inventor
Shanghai, CN

Overview

2→
Patents
2009–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices67%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests33%
PatentTitleYear
8,551,831'Silicon germanium and polysilicon gate structure for strained silicon transistors'20137,557,000'Etching method and structure using a hard mask for strained silicon MOS transistors'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2013Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI (2)· patent assignee history
2009–2013Based in Shanghai, CN· patent location history
2013Patents assigned to BONFANTI PAOLO (1)· patent assignee history
2013Patents assigned to CHEN JOHN (1)· patent assignee history
2013Patents assigned to GAO DA WEI (1)· patent assignee history
2013Patents assigned to SEMICONDUCTOR MFG INT BEIJING (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR MFG INT SHANGHAI22009–2013
BONFANTI PAOLOself12013
CHEN JOHN12013
GAO DA WEI12013
SEMICONDUCTOR MFG INT BEIJING12013
Locations
LocationPatentsSpan
Shanghai, CN22009–2013