Inventor

Hyun-Woo Chung

Inventor
Seoul, KR

Overview

43→
Patents
2011–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices32%
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G11CStatic stores3%
H10NElectric solid-state devices not otherwise provided for3%
G06KGraphical data reading2%
G06VImage or video recognition or understanding2%
G06FElectric digital data processing1%
PatentTitleYear
11,080,510Fingerprint recognition apparatus and method thereof202111,074,428Fingerprint identification device and method202110,490,444Semiconductor devices having an air gap20199,601,420'Semiconductor device and method of manufacturing the same'20179,520,348'Semiconductor devices and methods of manufacturing the same'20169,449,677'Methods of operating and forming semiconductor devices including dual-gate electrode structures'20169,184,136'Semiconductor devices and methods for fabricating the same'20159,165,935'Semiconductor devices and methods for manufacturing the same'20159,117,696'Semiconductor devices having balancing capacitor and methods of forming the same'20159,111,960'Semiconductor devices with vertical channel transistors'20159,087,728'Semiconductor device'20158,987,111'Method of manufacturing a three dimensional array having buried word lines of different heights and widths'20158,987,811'Semiconductor devices including a vertical channel transistor and methods of fabricating the same'20158,884,340'Semiconductor devices including dual gate electrode structures and related methods'20148,786,009'Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same'20148,766,354'Semiconductor devices including vertical channel transistors and methods of manufacturing the same'20148,742,493'Semiconductor devices having vertical channel transistors and methods for fabricating the same'20148,623,724'Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor'20148,552,472'Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same'20138,524,560'Method of fabricating semiconductor device with vertical channel transistor'20138,497,174'Method of fabricating semiconductor device including vertical channel transistor'20138,492,832'Semiconductor device'20138,420,485'Semiconductor device having vertical channel transistor and method of manufacturing the same'20138,409,953'Method of manufacturing a semiconductor device'20138,384,141'Semiconductor device with vertical channel transistor'20138,373,214'Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices'20138,372,715'Vertical channel transistors and methods for fabricating vertical channel transistors'20138,343,831'Semiconductor device and method of manufacturing the semiconductor device'20138,344,437'Semiconductor device with vertical channel transistor'20138,324,673'Semiconductor memory devices and methods of forming the same'20128,304,824'Semiconductor device comprising buried word lines'20128,294,131'Integrated circuit devices including low-resistivity conductive patterns in recessed regions'20128,283,229'Methods of fabricating vertical channel transistors'20128,274,112'Semiconductor memory device having pillar structures'20128,247,856'Semiconductor device including a capacitor electrically connected to a vertical pillar transistor'20128,058,683'Access device having vertical channel and related semiconductor device and a method of fabricating the access device'20118,053,316'Method of fabricating vertical channel transistor'20117,999,309'Semiconductor device'20117,977,725'Integrated circuit semiconductor device including stacked level transistors'20117,943,978'Semiconductor device'20117,902,026'Method of fabricating semiconductor device having vertical channel transistor'20117,872,302'Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate'20117,863,174'Vertical pillar transistor'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (41)· patent assignee history
2011–2017Patents assigned to CHUNG HYUN-WOO (29)· patent assignee history
2011–2015Patents assigned to KIM HUI-JUNG (15)· patent assignee history
2011–2016Based in Seoul, KR· patent location history
2012–2014Patents assigned to KIM KANG-UK (13)· patent assignee history
2012–2014Patents assigned to KIM HYUN-GI (12)· patent assignee history
2015–2017Based in Yongin-si, KR· patent location history
2019Based in Seol, KR· patent location history
2021Based in Miao-Li County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD412011–2019
CHUNG HYUN-WOOself292011–2017
KIM HUI-JUNG152011–2015
KIM KANG-UK132012–2014
KIM HYUN-GI122012–2014
Locations
LocationPatentsSpan
Seoul, KR352011–2016
Yongin-si, KR52015–2017
Miao-Li County, TW12021
Seol, KR12019