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Inventor

Akio Nishida

Inventor
Tachikawa, JP

Overview

95→
Patents
1988–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 95 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01LSemiconductor devices11%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems5%
H03KPulse technique4%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
11,133,297Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof202111,069,703Three-dimensional device with bonded structures including a support die and methods of making the same202110,833,100Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same202010,811,058Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the same202010,804,202Bonded assembly including a semiconductor-on-insulator die and methods for making the same202010,797,060Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same202010,797,070Three-dimensional memory device containing a replacement buried source line and methods of making the same202010,797,061Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same202010,797,062Bonded die assembly using a face-to-back oxide bonding and methods for making the same202010,741,576Three-dimensional memory device containing drain-select-level air gap and methods of making the same202010,714,497Three-dimensional device with bonded structures including a support die and methods of making the same202010,700,028Vertical chip interposer and method of making a chip assembly containing the vertical chip interposer202010,665,607Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same202010,665,580Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same202010,516,025Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the same201910,515,897Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same201910,510,738Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof201910,354,987Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same201910,355,100Field effect transistors having different stress control liners and method of making the same201910,354,980Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same201910,283,493Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof201910,283,566Three-dimensional memory device with through-stack contact via structures and method of making thereof201910,224,373Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same20199,673,304'Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory'20179,530,485'Semiconductor integrated circuit device with reduced leakage current'20169,443,910'Silicided bit line for reversible-resistivity memory'20169,356,110'Semiconductor device and manufacturing method thereof'20169,349,743'Method of manufacturing semiconductor device'20169,324,726'Method for manufacturing a semiconductor device'20169,111,636'Semiconductor integrated circuit device with reduced leakage current'20158,797,791'Semiconductor integrated circuit device with reduced leakage current'20148,669,172'Method of manufacturing nonvolatile semiconductor device'20148,587,970'Isolated switching power supply apparatus including primary-side and secondary-side digital control circuits'20138,476,138'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20138,437,179'Semiconductor integrated circuit device with reduced leakage current'20138,232,589'Semiconductor integrated circuit device with reduced leakage current'20128,211,777'Method of manufacturing nonvolatile semiconductor device'20128,125,017'Semiconductor integrated circuit device with reduced leakage current'20127,985,678'Method of manufacturing a semiconductor integrated circuit device'20117,972,920'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20117,973,497'Discharge tube lighting apparatus'20117,964,484'Semiconductor integrated circuit device with reduced leakage current'20117,893,505'Semiconductor integrated circuit device'20117,833,905'Method of manufacturing a semiconductor integrated circuit device'20107,719,139'Power supply unit'20107,705,392'Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device'20107,701,020'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20107,595,266'Method of manufacturing a semiconductor integrated circuit device'20097,582,950'Semiconductor chip having gettering layer, and method for manufacturing the same'20097,569,881'Semiconductor integrated circuit device with reduced leakage current'20097,495,289'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20097,488,639'Method of manufacturing a semiconductor integrated circuit device'20097,433,208'Switching power supply device and electronic apparatus'20087,411,238'Semiconductor integrated circuit device and a method of manufacturing the same'20087,402,475'Method of manufacturing a semiconductor integrated circuit device'20087,388,238'Semiconductor integrated circuit device with reduced leakage current'20087,221,056'Semiconductor integrated circuit device and manufacturing method thereof'20077,190,031'Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20077,179,737'Semiconductor device and a method of manufacturing the same'20077,161,215'Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device'20077,145,194'Semiconductor integrated circuit device and a method of manufacturing the same'20067,109,126'Method of manufacturing a semiconductor integrated circuit device'20067,098,478'Semiconductor memory device using vertical-channel transistors'20067,087,942'Semiconductor integrated circuit device with reduced leakage current'20067,067,864'SRAM having an improved capacitor'20067,045,864'Semiconductor integrated circuit device'20066,998,674'Semiconductor integrated circuit device with reduced leakage current'20066,953,728'Semiconductor device and method of manufacturing thereof'20056,943,373'Semiconductor memory device using vertical-channel transistors'20056,922,345'Fly-back converter with constant pulse width and variable duty cycle using a capacitor in control circuit'20056,897,499'Semiconductor integrated circuit device including MISFETs each with a gate electrode extended over a boundary region between an active region and an element isolation trench'20056,898,090'Switching power supply unit and electronic apparatus using the same'20056,885,057'Semiconductor integrated circuit device with reduced leakage current'20056,727,146'Semiconductor device and method of manufacturing thereof'20046,677,194'Method of manufacturing a semiconductor integrated circuit device'20046,670,642'Semiconductor memory device using vertical-channel transistors'20036,611,436'Switching power supply unit having a regulator circuit and electronic apparatus using the same'20036,586,807'Semiconductor integrated circuit device'20036,577,511'Switching power supply unit and electronic apparatus using the same'20036,552,623'Self-oscillation type switching power supply unit'20036,532,159'Switching power supply unit'20036,529,392'Switching power supply unit'20036,498,100'Method of manufacturing semiconductor devices'20026,433,443'Switching power supply having two or more DC outputs with switching circuit provided between the outputs'20026,380,085'Method of manufacturing semiconductor devices'20026,295,211'Switching power supply unit having delay circuit for reducing switching frequency'20016,285,566'RCC power supply with remote disabling of oscillation frequency control'20016,204,184'Method of manufacturing semiconductor devices'20016,185,112'Switching power supply having a frequency limiting circuit'20016,160,720'Switching power supply unit utilizing a voltage dropping circuit'20006,081,433'Switching power supply apparatus'20005,523,592'Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same'19965,338,942'Semiconductor projections having layers with different lattice constants'19944,786,490'Process and apparatus for producing high purity magnesium oxide fine particles'19884,721,610'Process for producing metal oxide particles having a very small and uniform size'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2013Patents assigned to MURATA MANUFACTURING CO (16)· patent assignee history
2000–2011Based in Kyoto, JP· patent location history
2001–2016Based in Tachikawa, JP· patent location history
2003–2010Patents assigned to RENESAS TECH CORP (18)· patent assignee history
2003–2013Patents assigned to HITACHI ULSI SYS CO LTD (14)· patent assignee history
2006–2011Based in Takarazuka, JP· patent location history
2009–2014Based in Tokyo, JP· patent location history
2010–2016Patents assigned to RENESAS ELECTRONICS CORP (17)· patent assignee history
2016–2021Patents assigned to SANDISK TECHNOLOGIES LLC (25)· patent assignee history
2019–2021Based in Yokkaichi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SANDISK TECHNOLOGIES LLC252016–2021
RENESAS TECH CORP182003–2010
RENESAS ELECTRONICS CORP172010–2016
MURATA MANUFACTURING CO162000–2013
HITACHI ULSI SYS CO LTD142003–2013
Locations
LocationPatentsSpan
Tachikawa, JP352001–2016
Yokkaichi, JP222019–2021
Kyoto, JP162000–2011
Takarazuka, JP62006–2011
Tokyo, JP42009–2014