Inventor
Kazufumi Suenaga
Inventor
Tsuchiura, JP
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for24%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C23CCoating metallic material6%
H10BElectronic memory devices4%
Y10TTechnical subjects covered by former us classification4%
G11CStatic stores3%
H01BCables3%
C04BLime, magnesia2%
PatentTitleYear
10,770,772Signal transmission cable, multicore cable, and method of manufacturing signal transmission cable202010,755,836Signal transmission cable202010,658,569Method for manufacturing niobate-system ferroelectric thin-film device202010,615,477Differential signal transmission cable, multi-core cable, and manufacturing method of differential signal transmission cable202010,597,790Refined copper, method of producing refined copper, electric wire and method of manufacturing electric wire202010,497,855Ferroelectric thin-film laminated substrate, ferroelectric thin-film device, and manufacturing method of ferroelectric thin-film laminated substrate201910,312,604Crimping terminal and electric wire with crimping terminal201910,276,777Ferroelectric thin-film laminated substrate, ferroelectric thin-film device,and manufacturing method of ferroelectric thin-film laminated substrate201910,211,044Method for manufacturing ferroelectric thin film device201910,199,564Method for manufacturing niobate-system ferroelectric thin-film device201910,186,655Method for manufacturing ferroelectric thin film device201910,181,407Method for manufacturing niobate-system ferroelectric thin-film device20199,893,266'Piezoelectric film element, and piezoelectric film device including piezoelectric film including alkali niobate-based perovskite structure'20189,882,546'Alkali-niobate-based piezoelectric thin film element'20189,685,603'Method for manufacturing niobate-system ferroelectric thin film device'20179,620,703'Piezoelectric thin-film element, piezoelectric sensor and vibration generator'20179,406,867'Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device'20169,385,297'Method for manufacturing niobate-system ferroelectric thin film device'20169,368,713'Piezoelectric film-attached substrate, piezoelectric film element and method of manufacturing the same'20169,299,911'Piezoelectric thin-film multilayer body'20169,293,688'Piezoelectric element and piezoelectric device'20169,231,185'Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device'20169,166,142'Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device'20158,896,187'Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device'20148,860,286'Piezoelectric thin film element, and piezoelectric thin film device'20148,581,477'Piezoelectric film element using (Na,K,Li)NbO3'20138,519,602'Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series'20138,450,911'Piezoelectric thin film having a high piezoelectric constant and a low leak current'20138,446,074'Piezoelectric thin-film element and piezoelectric thin-film device'20138,310,135'Piezoelectric thin film element and piezoelectric thin film device including the same'20128,310,136'Piezoelectric thin film element, and piezoelectric thin film device'20128,304,966'Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device'20128,232,708'Piezoelectric thin film element, and piezoelectric thin film device'20128,084,925'Piezoelectric thin film elemental device, sensor and actuator'20118,058,779'Piezoelectric thin film element'20116,995,058'Semiconductor memory device and manufacturing method thereof'20066,906,365'Ferroelectric memory device including an upper protection electrode'20056,897,503'Semiconductor memory device and manufacturing process for the same'20056,867,446'Semiconductor memory device'20056,623,986'Method of manufacturing a ferroelectric memory device'20036,579,754'Semiconductor memory device having ferroelectric film and manufacturing method thereof'20036,445,025'Semiconductor memory device and manufacturing method thereof'20026,316,798'Ferroelectric memory device and method for manufacturing the same'20016,239,457'Semiconductor memory device and manufacturing method thereof'20016,031,694'Magnetic head with protective film comprising amorphous CaMgSi.sub.2 b. O.su6, Mg.sub.2 SiO.sub.4 and/or MgAl.sub.2 O.sub.4'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2006Based in Yokohama, JP· patent location history
2011–2016Patents assigned to SHIBATA KENJI (15)· patent assignee history
2011–2016Patents assigned to SUENAGA KAZUFUMI (15)· patent assignee history
2011–2016Patents assigned to HITACHI CABLE (12)· patent assignee history
2011–2018Based in Tsuchiura, JP· patent location history
2012–2016Patents assigned to NOMOTO AKIRA (13)· patent assignee history
2013–2020Based in Tokyo, JP· patent location history
2016–2020Patents assigned to SUMITOMO CHEMICAL CO (15)· patent assignee history
2019–2020Based in Hitachinaka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHIBATA KENJI | 15 | 2011–2016 |
| SUENAGA KAZUFUMIself | 15 | 2011–2016 |
| SUMITOMO CHEMICAL CO | 15 | 2016–2020 |
| NOMOTO AKIRA | 13 | 2012–2016 |
| HITACHI CABLE | 12 | 2011–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tsuchiura, JP | 20 | 2011–2018 |
| Tokyo, JP | 13 | 2013–2020 |
| Yokohama, JP | 10 | 2000–2006 |
| Hitachinaka, JP | 2 | 2019–2020 |