Inventor
TAKEHIRO YOSHIDA
Inventor
JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices12%
C23CCoating metallic material7%
G06FElectric digital data processing5%
G02BOptical elements, systems or apparatus3%
H04NPictorial communication, e.g. television3%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers3%
C01BNon-metallic elements2%
PatentTitleYear
12,595,588Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure202612,506,851Image display system202512,446,281Nitride semiconductor substrate manufacturing method, and laminated structure202512,435,441Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure202512,399,364Wearable device, control device, system, control method, and non-transitory computer readable medium202512,174,132Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate202412,091,774Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate202412,071,707Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure202412,032,163Wearable device, control device, system, control method, and non- transitory computer readable medium202411,970,784Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure202411,967,617Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof202411,908,688Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure202411,873,578Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate202411,718,927Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more202311,706,396Image processing apparatus that performs processing concerning display of stereoscopic image, image processing method, and storage medium202311,640,906Crystal laminate, semiconductor device and method for manufacturing the same202311,339,500Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device202211,339,053Nitride crystal2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to SUMITOMO CHEMICAL CO (13)· patent assignee history
2022Patents assigned to SCIOCS CO LTD (2)· patent assignee history
2022–2026Based in JP· patent location history
2023–2025Patents assigned to CANON KK (4)· patent assignee history
2023Patents assigned to UNIV HOSEI (1)· patent assignee history
2026Patents assigned to SUMITOMO CHEMICAL COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO CHEMICAL CO | 13 | 2022–2025 |
| CANON KK | 4 | 2023–2025 |
| SCIOCS CO LTD | 2 | 2022 |
| SUMITOMO CHEMICAL COMPANY LTD | 1 | 2026 |
| UNIV HOSEI | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 18 | 2022–2026 |