Inventor
Yuichi Minoura
Inventor
Zama, JP
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems6%
B82YSpecific uses or applications of nanostructures2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
PatentTitleYear
10,964,805Compound semiconductor device202110,804,358Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor202010,483,185Semiconductor device and method for manufacturing same20199,947,781Semiconductor device and manufacturing method thereof20189,728,618'Semiconductor device and manufacturing method thereof'20179,685,338'Compound semiconductor device and method of manufacturing the same'20179,553,152'Semiconductor device'20179,496,380'Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same'20169,425,268'Compound semiconductor device and method of manufacturing the same'20169,312,350'Semiconductor device and manufacturing method thereof'20169,306,031'Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier'20169,209,042'Compound semiconductor device and manufacturing method therefor'20159,034,722'Method of removing a compound semiconductor layer from a compound semiconductor device'20159,035,353'Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same'20159,035,357'Compound semiconductor device and manufacturing method therefor'20159,035,414'Compound semiconductor device and manufacturing method thereof'20158,969,921'Semiconductor device and manufacturing method thereof'20158,937,337'Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier'20158,791,465'Compound semiconductor device and manufacturing therefor'20148,709,886'Compound semiconductor device and manufacturing method therefor'20148,586,433'Compound semiconductor device and manufacturing method thereof'20138,461,041'Semiconductor device and method of manufacturing semiconductor device'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2021Patents assigned to FUJITSU LTD (20)· patent assignee history
2013–2016Patents assigned to MINOURA YUICHI (9)· patent assignee history
2013–2015Patents assigned to OZAKI SHIROU (5)· patent assignee history
2013–2018Based in Zama, JP· patent location history
2013–2016Based in Kawasaki, JP· patent location history
2014–2016Patents assigned to OHKI TOSHIHIRO (5)· patent assignee history
2014–2015Patents assigned to MAKIYAMA KOZO (4)· patent assignee history
2019–2021Based in Machida, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU LTD | 20 | 2013–2021 |
| MINOURA YUICHIself | 9 | 2013–2016 |
| OHKI TOSHIHIRO | 5 | 2014–2016 |
| OZAKI SHIROU | 5 | 2013–2015 |
| MAKIYAMA KOZO | 4 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Zama, JP | 14 | 2013–2018 |
| Kawasaki, JP | 5 | 2013–2016 |
| Machida, JP | 3 | 2019–2021 |