Inventor
Youn-Seon Kang
Inventor
Yongin-si, KR
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices30%
H10NElectric solid-state devices not otherwise provided for30%
H01LSemiconductor devices16%
C23CCoating metallic material10%
G11CStatic stores8%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy2%
H10DInorganic electric semiconductor devices2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,276,793Variable resistance memory devices and methods of manufacturing the same20199,812,501'Variable resistance memory devices and methods of manufacturing the same'20179,685,609'Variable resistance memory devices and methods of manufacturing the same'20179,640,586'Semiconductor diodes, and variable resistance memory devices'20179,450,025'Resistive memory device and method of operating resistive memory device'20169,431,458'Semiconductor devices and methods of manufacturing the same'20169,391,269'Variable resistance memory devices'20169,373,664'Variable resistance memory devices and methods of manufacturing the same'20169,269,746'Semiconductor devices and methods of manufacturing the same'20169,184,218'Semiconductor memory device having three-dimensional cross point array'20158,017,929'Phase change material layers and phase change memory devices including the same'20118,003,162'Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same'20117,994,492'Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device'20117,993,963'Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device'20117,902,048'Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer'20117,777,213'Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same'20107,754,586'Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same'20107,737,527'Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device'20106,376,027'Method for crystallizing lithium transition metal oxide thin film by plasma treatment'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Based in Daejeon, KR· patent location history
2010–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (18)· patent assignee history
2010–2019Based in Yongin-si, KR· patent location history
2010–2011Based in Seoul, KR· patent location history
2016–2017Patents assigned to KANG YOUN-SEON (5)· patent assignee history
2016–2017Patents assigned to JUNG SEUNG-JAE (4)· patent assignee history
2016Patents assigned to CHOI JUNG-DAL (2)· patent assignee history
2016–2017Patents assigned to SEONG DONG-JUN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 18 | 2010–2019 |
| KANG YOUN-SEONself | 5 | 2016–2017 |
| JUNG SEUNG-JAE | 4 | 2016–2017 |
| CHOI JUNG-DAL | 2 | 2016 |
| SEONG DONG-JUN | 2 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 12 | 2010–2019 |
| Seoul, KR | 6 | 2010–2011 |
| Daejeon, KR | 1 | 2002 |