Inventor

Sheng-Che Lin

Inventor

Hsinchu, TW

Overview

2017–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 85 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices18%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%

G06FElectric digital data processing16%

H10DInorganic electric semiconductor devices16%

G01RMeasuring electric variables14%

G01NInvestigating or analysing materials by determining their chemical or physical properties1%

G11CStatic stores0%

G06KGraphical data reading0%

G06TImage data processing or generation, in general0%

PatentTitleYear

11,133,289Semiconductor package and manufacturing method of semiconductor package having plurality of encapsulating materials2021 11,101,145Semiconductor device with dummy micro bumps between stacking dies to improve flowability of underfill material2021 11,101,252Package-on-package structure and manufacturing method thereof2021 11,056,436Integrated fan-out structure with rugged interconnect2021 10,854,522Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas2020 10,777,472IC with test structures embedded within a contiguous standard cell area2020 10,593,604Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells2020 10,546,792Method for manufacturing a semiconductor product wafer2020 10,410,735Direct access memory characterization vehicle2019 10,380,305Direct probing characterization vehicle for transistor, capacitor and resistor testing2019 10,290,552Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage2019 10,269,786Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells2019 10,211,112Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas2019 10,211,111Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas2019 10,199,284Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and chamfer short test areas2019 10,199,293Method for processing a semiconductor water using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side to side short, and chamfer short test areas2019 10,199,290Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage2019 10,199,289Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas2019 10,199,287Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas2019 10,199,285Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakages, and at least one via respective tip-to-tip short, side-to-side short, and via open test areas2019 10,199,288Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areas2019 10,199,294Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage2019 10,199,286Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas2019 10,199,283Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage2019 10,109,539Integrated circuit including NCEM-enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates2018 10,096,530Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells2018 10,096,378On-chip capacitance measurement for memory characterization vehicle2018 10,096,529Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cells2018 9,984,944Integrated circuit containing DOEs of GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells2018 9,953,889Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of GATECNT-GATE via opens2018 9,947,601Integrated circuit including NCEM-enabled, side-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates2018 9,929,063'Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,929,136'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-Enabled fill cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells'2018 9,922,890'Integrated circuit including NCEM-enabled, snake-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,922,968'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells'2018 9,911,669'Integrated circuit including NCEM-enabled, diagonal gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,911,670'Integrated circuit including NCEM-enabled, via-open/resistance-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gate'2018 9,911,649'Process for making and using mesh-style NCEM pads'2018 9,911,668'Integrated circuit including NCEM-enabled, corner gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,905,487'Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of V0 via opens'2018 9,905,553'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells'2018 9,899,276'Process for making an integrated circuit that includes NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,881,843'Integrated circuit including NCEM-Enabled, tip-to-tip gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,870,966'Process for making semiconductor dies, chips and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on test wafers that include multiple means/steps for enabling NC detection of AACNT-TS via opens'2018 9,870,962'Integrated circuit including NCEM-enabled, interlayer overlap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates'2018 9,871,028'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including chamfer short configured fill cells'2018 9,865,583'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells'2018 9,847,264Method for manufacturing a semiconductor product wafer2017 9,831,141Integrated circuit containing DOEs of GATE-snake-open-configured, NCEM-enabled fill cells2017 9,825,018'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including chamfer short configured fill cells'2017 9,818,660'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including metal island open configured fill cells'2017 9,818,738'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells with first DOE including tip-to-side short configured fill cells and second DOE including chamfer short configured fill cells'2017 9,805,994'Mesh-style NCEM pads, and process for making semiconductor dies, chips, and wafers using in-line measurements from such pads'2017 9,799,575'Integrated circuit containing DOEs of NCEM-enabled fill cells'2017 9,799,640'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells'2017 9,793,253'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least Via-open-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured NCEM-enabled fill cells'2017 9,786,650'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including metal island open configured fill cells'2017 9,786,649'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells'2017 9,785,496'Process for making semiconductor dies, chips, and wafers using non-contact measurements obtained from DOEs of NCEM-enabled fill cells on wafers that include multiple steps for enabling NC detecteion of AACNT-TS via opens'2017 9,786,648'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells'2017 9,780,083'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, TS-short-configured, metal-short configured, and AA-short-configured, NCEM-enabled fill cells'2017 9,778,974'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including metal island open configured fill cells'2017 9,773,773'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATE-short-configured, and GATECNT-short-configured, NCEM-enabled fill cells'2017 9,773,775'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells'2017 9,773,774'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells'2017 9,766,970'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including metal island open configured fill cells'2017 9,768,156'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells'2017 9,768,083'Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells'2017 9,761,574'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATECNT-short-configured, metal-short-configured, and AA-short-configured, NCEM-enabled fill cells'2017 9,761,575'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least chamfer-short-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cells'2017 9,761,502'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including merged-via configured fill cells'2017 9,761,573'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cells'2017 9,748,153'Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure'2017 9,741,741'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATE-short-configured, and GATECNT-short-configured, NCEM-enables fill cells'2017 9,741,703'Integrated circuit containing standard logic cells and ilbrary-compatible, NCEM-enabled fill cells, including at least via-open-configured, gate-short-configured, TS-short-configured, and AA-short-conigured, NCEM-enabled fill cells'2017 9,728,553'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATE-short-configured, and TS-short-configured, NCEM-enabled fill cells'2017 9,721,937'Integrated circuit containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-tip short configured fill cells'2017 9,721,938'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including tip-to-tip short configured fill cells, and the second DOE including corner short configured fill cells'2017 9,711,496'Integrated circuit containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configured fill cells'2017 9,711,421'Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of GATE-snake-open-configured, NCEM-enabled fill cells'2017 9,691,672'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells'2017 9,653,446'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells'2017 9,646,961'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and metal-short-configured, NCEM-enabled fill cells'2017 9,627,370'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells'2017 9,627,371'Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and AA-short-configured, NCEM-enabled fill cells'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017–2020Patents assigned to PDF SOLUTIONS INC (81)· patent assignee history

2017–2020Based in Hsinchu, TW· patent location history

2017–2020Based in Baoshan Township, TW· patent location history

2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history

2021Based in Taipei, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
PDF SOLUTIONS INC	81	2017–2020
TAIWAN SEMICONDUCTOR MFG CO LTD	4	2021

Locations

Location	Patents	Span
Hsinchu, TW	76	2017–2020
Baoshan Township, TW	5	2017–2020
Taipei, TW	4	2021