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Inventor

Naohiro Suzuki

Inventor
Anjo, JP

Overview

23→
Patents
2005–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices43%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01LSemiconductor devices15%
G06FElectric digital data processing7%
H04LTransmission of digital information, e.g. telegraphic communication4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G05BControl or regulating systems in general2%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes2%
PatentTitleYear
9,818,860'Silicon carbide semiconductor device and method for producing the same'20179,674,058'Time series data processing device, time series data processing method, and computer-readable recording medium storing time series data processing program'20179,647,108'Silicon carbide semiconductor device'20179,608,104'Silicon carbide semiconductor device and method for manufacturing same'20179,543,428'Silicon carbide semiconductor device and method for producing the same'20179,276,075'Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same'20168,952,430'Semiconductor device and method for manufacturing semiconductor device'20158,901,573'Silicon carbide semiconductor device and method of manufacturing the same'20148,782,650'Distributed processing of partitioned stream data including data element group and end data'20148,618,555'Silicon carbide semiconductor device and method of manufacturing the same'20138,492,867'Semiconductor device including cell region and peripheral region having high breakdown voltage structure'20138,193,564'Silicon carbide semiconductor device including deep layer'20128,190,599'Stream data processing method and system'20128,022,414'Silicon carbide semiconductor device, and method of manufacturing the same'20117,855,412'Silicon carbide semiconductor device and method of manufacturing the same'20107,851,854'SiC semiconductor device having bottom layer and method for manufacturing the same'20107,838,888'Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same'20107,825,449'Silicon carbide semiconductor device and related manufacturing method'20107,745,276'Method for manufacturing SiC semiconductor device'20107,732,821'Silicon carbide semiconductor device'20107,679,143'Semiconductor device having MOS transistor and protection diode and method for designing the same'20107,553,722'Semiconductor device and method for manufacturing the same'20096,972,458'Horizontal MOS transistor'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2017Patents assigned to DENSO CORP (20)· patent assignee history
2005–2017Based in Anjo, JP· patent location history
2012–2017Patents assigned to SUZUKI NAOHIRO (9)· patent assignee history
2012–2014Based in Yokohama, JP· patent location history
2013–2017Patents assigned to TOYOTA MOTOR CO LTD (7)· patent assignee history
2013–2017Patents assigned to TAKAYA HIDEFUMI (6)· patent assignee history
2013–2016Patents assigned to ISHIKAWA TSUYOSHI (4)· patent assignee history
2017Based in Kariya, JP· patent location history
2017Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
DENSO CORP202005–2017
SUZUKI NAOHIROself92012–2017
TOYOTA MOTOR CO LTD72013–2017
TAKAYA HIDEFUMI62013–2017
ISHIKAWA TSUYOSHI42013–2016
Locations
LocationPatentsSpan
Anjo, JP182005–2017
Kariya, JP22017
Yokohama, JP22012–2014
Tokyo, JP12017