Inventor
Hsin-Ying Lin
Inventor
Tainan, TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
A61MDevices for introducing media into, or onto, the body8%
C25BElectrolytic or electrophoretic processes for the production of compounds or non-metals8%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
C02FTreatment of water, waste water, sewage, or sludge3%
G06FElectric digital data processing3%
B01DSeparation2%
PatentTitleYear
10,995,411Gas generator202110,981,809Gas generating apparatus with separated water pump202110,982,340Water electrolysis device202110,927,467Gas generator202110,926,055Healthy gas generating system202110,727,068Method for manufacturing semiconductor structure with mask structure202010,468,257Mechanisms for semiconductor device structure201910,276,437Contact structure of gate structure20199,576,847'Method for forming integrated circuit structure with thinned contact'20179,536,754'Method of forming contact structure of gate structure'20179,449,886'Semiconductor device and formation thereof'20169,425,048'Mechanisms for semiconductor device structure'20169,331,173'Semiconductor device having a carbon containing insulation layer formed under the source/drain'20169,318,488'Semiconductor device and formation thereof'20169,312,259'Integrated circuit structure with thinned contact'20169,299,657'Semiconductor device and method for manufacturing semiconductor device'20169,123,563'Method of forming contact structure of gate structure'20159,093,299'Semiconductor arrangement and formation thereof'20158,225,301'Software licensing management'20127,694,107'Dynamic performance ratio proportionate distribution of threads with evenly divided workload by homogeneous algorithm to heterogeneous computing units'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2012Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (2)· patent assignee history
2010–2012Based in Richardson, TX, US· patent location history
2012Patents assigned to BORGES LEONARDO JOSE (1)· patent assignee history
2015–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2015–2020Based in Tainan, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2021Patents assigned to LIN HSIN YUNG (5)· patent assignee history
2021Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2016–2020 |
| LIN HSIN YUNGself | 5 | 2021 |
| TAIWAN SEMICONDUCTOR MFG | 5 | 2015–2016 |
| HEWLETT PACKARD DEVELOPMENT CO | 2 | 2010–2012 |
| BORGES LEONARDO JOSE | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 13 | 2015–2020 |
| Shanghai, CN | 5 | 2021 |
| Richardson, Texas, US | 2 | 2010–2012 |