Inventor
Hyun-Su Kim
Inventor
Gyeonggi-do, KR
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10BElectronic memory devices11%
C23CCoating metallic material4%
A61KPreparations for medical, dental or toiletry purposes2%
C04BLime, magnesia2%
C07KPeptides2%
H01LSemiconductor devices2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
11,014,612Vehicle front structure202110,803,827Display apparatus and display method202010,790,147Method of manufacturing metal hardmask and semiconductor device202010,741,145Display apparatus and display method202010,468,895Charger with improved heat radiation and the manufacturing method thereof201910,121,660Method for fabricating semiconductor device201810,094,715Temperature sensor circuit capable of compensating for nonlinear components and compensation method for temperature sensor circuit20189,130,424'Rotor of interior permanent magnet motor'20158,486,783'Semiconductor device and method of manufacturing the same'20138,372,314'Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide'20138,294,220'Method for forming silicide contacts'20128,135,345'Method and apparatus for identifying JAVA PUSH request equipments using bluetooth in a mobile communication terminal'20127,936,024'Semiconductor devices having stacked structures'20117,897,500'Methods for forming silicide conductors using substrate masking'20117,867,898'Method forming ohmic contact layer and metal wiring in semiconductor device'20117,862,748'Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide'20117,846,796'Semiconductor devices including buried bit lines'20107,833,847'Method of forming semiconductor device having stacked transistors'20107,749,840'Methods of forming a semiconductor device including buried bit line'20107,687,331'Stacked semiconductor device and method of fabrication'20107,666,786'Methods of fabricating semiconductor devices having a double metal salicide layer'20107,662,716'Method for forming silicide contacts'20107,662,707'Method of forming relatively continuous silicide layers for semiconductor devices'20107,638,433'Semiconductor device and method of fabricating the same'20097,615,817'Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method'20097,579,225'Method of forming semiconductor device having stacked transistors'20097,569,483'Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus'20097,560,331'Method for forming a silicided gate'20097,531,459'Methods of forming self-aligned silicide layers using multiple thermal processes'20097,435,634'Methods of forming semiconductor devices having stacked transistors'20087,432,185'Method of forming semiconductor device having stacked transistors'20087,416,968'Methods of forming field effect transistors having metal silicide gate electrodes'20087,410,892'Methods of fabricating integrated circuit devices having self-aligned contact structures'20087,381,989'Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors'20087,312,150'Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same'20077,285,493'Methods of forming a metal layer using transition metal precursors'20077,238,612'Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same'20077,214,620'Methods of forming silicide films with metal films in semiconductor devices and contacts including the same'20077,211,506'Methods of forming cobalt layers for semiconductor devices'20077,172,967'Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same'20077,045,842'Integrated circuit devices having self-aligned contact structures'20066,309,650'Attenuated Japanese encephalitis virus adapted to Vero cell and a Japanese encephalitis vaccine'20015,861,163'Process for preparing a vaccine against pseudomonas aeruginosa using attenuated strains'19995,790,584'Highly repetitive laser employing a rotating wedge'19985,208,842'Precision digitally-controlled variable attenuation circuit'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2001Patents assigned to CHEIL JEDANG CORP (2)· patent assignee history
1999–2021Based in Seoul, KR· patent location history
2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (34)· patent assignee history
2006–2012Based in Gyeonggi-do, KR· patent location history
2008–2020Based in Suwon-si, KR· patent location history
2010–2013Based in Hwaseong-si, KR· patent location history
2012–2013Patents assigned to KIM HYUN-SU (3)· patent assignee history
2015–2021Patents assigned to HYUNDAI MOTOR CO LTD (2)· patent assignee history
2015–2021Patents assigned to KIA MOTORS CORP (2)· patent assignee history
2018Based in Daegu, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 34 | 2006–2020 |
| KIM HYUN-SUself | 3 | 2012–2013 |
| CHEIL JEDANG CORP | 2 | 1999–2001 |
| HYUNDAI MOTOR CO LTD | 2 | 2015–2021 |
| KIA MOTORS CORP | 2 | 2015–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 24 | 2006–2012 |
| Suwon-si, KR | 10 | 2008–2020 |
| Seoul, KR | 5 | 1999–2021 |
| Hwaseong-si, KR | 2 | 2010–2013 |
| Daegu, KR | 1 | 2018 |