Inventor
TZU-CHUNG WANG
Inventor
TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices31%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H10BElectronic memory devices3%
PatentTitleYear
12,408,387Transistor with a negative capacitance and a method of creating the same202512,382,650Multi-layer dielectric refill for profile control in semiconductor devices202512,324,214Method and related apparatus for integrating electronic memory in an integrated chip202512,302,633Semiconductor devices and methods of manufacturing thereof202512,243,930Semiconductor device with fin end spacer dummy gate and method of manufacturing the same202512,224,334Semiconductor device with gate dielectric formed using selective deposition202512,112,987Semiconductor device with fin end spacer plug and method of manufacturing the same202412,046,663Fin field-effect transistor and method of forming the same202412,021,084Semiconductor devices and methods of manufacturing thereof202411,996,472Multi-layer dielectric refill for profile control in semiconductor devices202411,955,547Semiconductor device including an epitaxy region202411,929,425Nanowire stack GAA device with inner spacer202411,817,488Method and related apparatus for integrating electronic memory in an integrated chip202311,798,849Semiconductor device with fin end spacer plug and method of manufacturing the same202311,721,700Semiconductor devices and methods of manufacturing thereof202311,699,739Semiconductor device with gate dielectric formed using selective deposition202311,626,510Fin Field-Effect Transistor and method of forming the same202311,605,562Semiconductor device with fin end spacer and method of manufacturing the same202311,600,718Multi-layer dielectric refill for profile control in semiconductor devices202311,444,174Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same202211,387,360Transistor with a negative capacitance and a method of creating the same202211,245,024Semiconductor device and manufacturing method thereof202211,244,867Semiconductor device with fin end spacer plug and method of manufacturing the same202211,233,139Fin field-effect transistor and method of forming the same202211,189,726Transistor with a negative capacitance and a method of creating the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2021–2025Based in TW· patent location history
2022–2025Patents assigned to UNIV NAT TAIWAN (3)· patent assignee history
2022–2025Patents assigned to UNIV NAT TAIWAN NORMAL (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2021–2025 |
| UNIV NAT TAIWAN | 3 | 2022–2025 |
| UNIV NAT TAIWAN NORMAL | 3 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 25 | 2021–2025 |