Inventor

Sadanori Arae

Inventor

Kanagawa, JP

Overview

2015–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 31 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices23%

H10DInorganic electric semiconductor devices23%

G09GArrangements or circuits for control of indicating devices using static means to present variable information14%

H10KOrganic electric solid-state devices13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%

C09DCoating compositions, e.g. paints, varnishes or lacquers3%

B05DProcesses for applying fluent materials to surfaces, in general1%

B41JTypewriters1%

C23CCoating metallic material1%

PatentTitleYear

11,069,780Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor2021 11,049,951Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same2021 11,018,262Field-effect transistor, method for producing the same, display element, image display device, and system2021 10,818,770Metal oxide, field-effect transistor, and method for producing the same2020 10,818,705Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system2020 10,790,308Field-effect transistor, display element, image display device, and system2020 10,748,784Field effect transistor, method for manufacturing same, display element, display device, and system2020 10,699,632Field-effect transistor having dual gate oxide insulating layers, display element, image display device, and system2020 10,672,914Field-effect transistor and method for producing field-effect transistor2020 10,643,901Field-effect transistor, display element, image display, system, and composition of gate insulating layer including silicon and magnesium oxides2020 10,629,623Gas barrier laminate, semiconductor device, display element, display device, and system2020 10,600,916Field-effect transistor, display element, image display device, and system2020 10,586,873Method for producing field-effect transistor2020 10,565,954Field-effect transistor, display element, image display device, and system2020 10,516,053Field-effect transistor, display element, image display device, and system2019 10,505,046Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor2019 10,403,234Field-effect transistor, display element, image display device, and system2019 10,403,765Semiconductor device, display device, display apparatus, and system2019 10,312,373Field-effect transistor (FET) having oxide insulating layer disposed on gate insulating film and between source and drain electrodes, and display element, display and system including said FET, and method of manufacturing said FET2019 10,269,293Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET2019 10,235,930Field-effect transistor including first and second gate insulating layers, display element, image display device and system including field-effect transistor2019 10,236,304Gas barrier laminate, semiconductor device, display element, display device, and system2019 10,204,799Method for manufacturing a field-effect transistor2019 10,170,635Semiconductor device, display device, display apparatus, and system2019 10,141,185Oxide semiconductor, coating liquid, method of forming oxide semiconductor film, semiconductor element, display element, image display device and image display system2018 10,115,828Field-effect transistor, display element, image display device, and system2018 10,008,181Field-effect transistor, display element, image display device, and system2018 9,972,274Field-effect transistor, display element, image display device, and system2018 9,748,097'Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor'2017 9,527,285'Nozzle plate, liquid droplet discharge head, and liquid droplet discharge apparatus'2016 9,112,039'Field-effect transistor, display element, image display device, and system'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2021Patents assigned to RICOH CO LTD (30)· patent assignee history

2015–2021Patents assigned to ABE YUKIKO (21)· patent assignee history

2015–2021Patents assigned to ARAE SADANORI (21)· patent assignee history

2015–2021Patents assigned to MATSUMOTO SHINJI (21)· patent assignee history

2015–2021Patents assigned to NAKAMURA YUKI (21)· patent assignee history

2015–2021Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
RICOH CO LTD	30	2015–2021
ABE YUKIKO	21	2015–2021
ARAE SADANORIself	21	2015–2021
MATSUMOTO SHINJI	21	2015–2021
NAKAMURA YUKI	21	2015–2021

Locations

Location	Patents	Span
Kanagawa, JP	31	2015–2021