Inventor
Shunichi Muto
Inventor
Atsugi, JP
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures32%
H10DInorganic electric semiconductor devices15%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
G05GControl devices or systems insofar as characterised by mechanical features only5%
G06FElectric digital data processing5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles2%
F16HGearing2%
PatentTitleYear
10,953,750Input device202110,901,451Input device20216,235,547'Semiconductor device and method of fabricating the same'20016,011,271'Semiconductor device and method of fabricating the same'20005,650,611'Light switching method, light switching apparatus and optical semiconductor device'19975,499,206'Semiconductor optical memory device for optical storage of information with increased recording density'19965,266,814'Optically activated resonant-tunneling transistor'19935,225,692'Non-linear quantum semiconductor optical device having a signal-to-noise ratio'19935,216,261'Non-linear optical device having an improved rate for recovery'19935,175,739'Semiconductor optical device having a non-linear operational characteristic'19925,160,993'High speed optosemiconductor device having multiple quantum wells'19925,130,766'Quantum interference type semiconductor device'19924,929,984'Resonant tunnelling barrier structure device'19904,825,264'Resonant tunneling semiconductor device'19894,786,957'Negative differential resistance element'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988Patents assigned to AGENCY IND SCIENCE TECHN (1)· patent assignee history
1988–1990Based in Isehara, JP· patent location history
1989–2001Patents assigned to FUJITSU LTD (12)· patent assignee history
1992–2001Based in Atsugi, JP· patent location history
1993–1997Based in Kawasaki, JP· patent location history
2021Patents assigned to ALPS ALPINE CO LTD (2)· patent assignee history
2021Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU LTD | 12 | 1989–2001 |
| ALPS ALPINE CO LTD | 2 | 2021 |
| AGENCY IND SCIENCE TECHN | 1 | 1988 |
Locations
| Location | Patents | Span |
|---|---|---|
| Atsugi, JP | 6 | 1992–2001 |
| Kawasaki, JP | 4 | 1993–1997 |
| Isehara, JP | 3 | 1988–1990 |
| Miyagi, JP | 2 | 2021 |