LexDanaLexDanabeta
Inventor

Joseph A. Yedinak

Inventor
Mountain Top, PA, US

Overview

58→
Patents
1992–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices46%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
F02PIgnition, other than compression ignition, for internal-combustion engines1%
H01TSpark gaps1%
H03KPulse technique1%
PatentTitleYear
10,868,113Trench-based power semiconductor devices with increased breakdown voltage characteristics202010,784,373Insulated gated field effect transistor structure having shielded source and method202010,749,027Methods and apparatus related to termination regions of a semiconductor device202010,446,640Termination implant enrichment for shielded gate MOSFETS201910,374,076Shield indent trench termination for shielded gate MOSFETs201910,236,340Termination implant enrichment for shielded gate MOSFETs20199,748,329'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20179,595,596'Superjunction structures for power devices'20179,559,498'Ignition control circuit with dual (two-stage) clamp'20179,509,227'MOSFET bridge circuit'20169,496,391'Termination region of a semiconductor device'20169,391,193'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20169,293,526'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20168,963,212'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20158,932,924'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20158,928,077'Superjunction structures for power devices'20158,889,511'Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor'20148,884,365'Trench-gate field effect transistor'20148,836,028'Superjunction structures for power devices and methods of manufacture'20148,803,207'Shielded gate field effect transistors'20148,786,010'Superjunction structures for power devices and methods of manufacture'20148,772,868'Superjunction structures for power devices and methods of manufacture'20148,673,700'Superjunction structures for power devices and methods of manufacture'20148,563,377'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20138,564,024'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20138,502,313'Double layer metal (DLM) power MOSFET'20138,492,837'Reduced process sensitivity of electrode-semiconductor rectifiers'20138,441,069'Structure and method for forming trench-gate field effect transistor with source plug'20138,357,976'Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device'20138,304,829'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20128,227,855'Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same'20128,193,581'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20128,174,067'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20128,148,749'Trench-shielded semiconductor device'20128,129,245'Methods of manufacturing power semiconductor devices with shield and gate contacts'20128,049,276'Reduced process sensitivity of electrode-semiconductor rectifiers'20118,043,913'Method of forming trench-gate field effect transistors'20118,013,391'Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture'20118,013,387'Power semiconductor devices with shield and gate contacts and methods of manufacture'20117,923,776'Trench-gate field effect transistor with channel enhancement region and methods of forming the same'20117,859,057'Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device'20107,595,542'Periphery design for charge balance power devices'20097,586,156'Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device'20097,582,519'Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction'20097,504,303'Trench-gate field effect transistors and methods of forming the same'20097,416,948'Trench FET with improved body to gate alignment'20087,230,313'Voltage divider field plate termination with unequal fixed biasing'20077,132,712'Trench structure having one or more diodes embedded therein adjacent a PN junction'20067,118,951'Method of isolating the current sense on power devices while maintaining a continuous stripe cell'20066,906,362'Method of isolating the current sense on power devices while maintaining a continuous stripe cell'20056,831,329'Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off'20046,798,019'IGBT with channel resistors'20046,777,747'Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability'20045,872,028'Method of forming power semiconductor devices with controllable integrated buffer'19995,323,036'Power FET with gate segments covering drain regions disposed in a hexagonal pattern'19945,218,220'Power FET having reduced threshold voltage'19935,164,802'Power VDMOSFET with schottky on lightly doped drain of lateral driver FET'19925,079,608'Power MOSFET transistor circuit with active clamp'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–1999Patents assigned to HARRIS CORP (5)· patent assignee history
1992–1994Based in Wilkes-Barre, PA, US· patent location history
1999–2014Based in Mountaintop, PA, US· patent location history
2004–2020Patents assigned to FAIRCHILD SEMICONDUCTOR (49)· patent assignee history
2009–2020Based in Mountain Top, PA, US· patent location history
2011Based in Moutaintop, PA, US· patent location history
2012–2015Patents assigned to YEDINAK JOSEPH A (17)· patent assignee history
2012–2013Patents assigned to PROBST DEAN E (6)· patent assignee history
2012–2014Patents assigned to GREBS THOMAS E (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FAIRCHILD SEMICONDUCTOR492004–2020
YEDINAK JOSEPH Aself172012–2015
PROBST DEAN E62012–2013
GREBS THOMAS E52012–2014
HARRIS CORP51992–1999
Locations
LocationPatentsSpan
Mountain Top, Pennsylvania, US342009–2020
Mountaintop, Pennsylvania, US191999–2014
Wilkes-Barre, Pennsylvania, US41992–1994
Moutaintop, Pennsylvania, US12011