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Inventor

Yasunori Mochizuki

Inventor
Tokyo, JP

Overview

3→
Patents
1999–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
C30BSingle-crystal growth25%
H10HInorganic light-emitting semiconductor devices having potential barriers25%
PatentTitleYear
6,483,135'Field effect transistor'20026,100,571'Fet having non-overlapping field control electrode between gate and drain'20005,902,393'Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2000Patents assigned to NEC CORP (2)· patent assignee history
1999–2002Based in Tokyo, JP· patent location history
2002Patents assigned to NEC COMPOUND SEMICONDUCTOR (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP21999–2000
NEC COMPOUND SEMICONDUCTOR12002
Locations
LocationPatentsSpan
Tokyo, JP31999–2002