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Inventor

Tsutomu Shimokawa

Inventor
Tokyo, JP

Overview

37→
Patents
1992–2019
Patent span
Chemistry
Primary field (CPC C)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices32%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
C07CAcyclic or carbocyclic compounds9%
C07DHeterocyclic compounds8%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds6%
C08LCompositions of macromolecular compounds6%
C09DCoating compositions, e.g. paints, varnishes or lacquers4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
PatentTitleYear
10,415,011Adherend recovery method, adherend recovery apparatus, gas-generating film and resin composition20199,348,226'Radiation-sensitive resin composition'20168,450,045'Pattern forming method'20138,431,324'Radiation-sensitive resin composition'20138,377,627'Compound and radiation-sensitive composition'20138,211,624'Method for pattern formation and resin composition for use in the method'20128,173,351'Compound and radiation-sensitive composition'20128,173,348'Method of forming pattern and composition for forming of organic thin-film for use therein'20128,119,324'Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film'20127,897,821'Sulfonium compound'20117,812,105'Compound, polymer, and radiation-sensitive composition'20107,297,461'Radiation sensitive resin composition'20077,288,359'Radiation-sensitive resin composition'20077,244,549'Pattern forming method and bilayer film'20077,202,016'Radiation-sensitive resin composition'20077,108,955'Polysiloxane, process for production thereof and radiation-sensitive resin composition'20067,108,954'Radiation-sensitive composition changing in refractive index and method of changing refractive index'20067,105,269'Copolymer, polymer mixture, and radiation-sensitive resin composition'20067,037,994'Acenaphthylene derivative, polymer, and antireflection film-forming composition'20066,964,840'Radiation-sensitive resin composition'20056,933,094'Radiation-sensitive resin composition'20056,852,791'Anti-reflection coating forming composition'20056,846,895'Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition'20056,830,868'Anthracene derivative and radiation-sensitive resin composition'20046,828,078'Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern'20046,824,954'Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same'20046,821,705'Radiation-sensitive resin composition'20046,800,414'Radiation-sensitive resin composition'20046,770,780'Vinylphenylpropionic acid derivatives, production process therefor, polymer thereof and radiation sensitive resin composition'20046,753,124'Radiation-sensitive resin composition'20046,623,907'Radiation-sensitive resin composition'20036,531,260'Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition'20036,517,992'N-sulfonyloxyimide compound and radiation-sensitive resin composition using the same'20036,482,568'Radiation-sensitive resin composition'20026,299,785'Electrode formation process'20015,432,039'Radiation sensitive quinone diazide and resin composition for microlens'19955,110,706'I-line radiation-sensitive alkali-soluble resin composition utilizing 1,2-quinone diazide compound and hydroxy-chalcone additive'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992Based in Yokkaichi, JP· patent location history
1995Based in Yokohama, JP· patent location history
2001–2019Patents assigned to JSR CORP (34)· patent assignee history
2001–2007Based in Mie, JP· patent location history
2003–2019Based in Tokyo, JP· patent location history
2003–2006Based in Suzuka, JP· patent location history
2012–2016Patents assigned to SHIMOKAWA TSUTOMU (8)· patent assignee history
2012–2013Patents assigned to KAI TOSHIYUKI (5)· patent assignee history
2012–2013Patents assigned to SHIMIZU DAISUKE (5)· patent assignee history
2012–2013Patents assigned to MATSUMURA NOBUJI (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
JSR CORP342001–2019
SHIMOKAWA TSUTOMUself82012–2016
KAI TOSHIYUKI52012–2013
SHIMIZU DAISUKE52012–2013
MATSUMURA NOBUJI32012–2013
Locations
LocationPatentsSpan
Tokyo, JP202003–2019
Mie, JP102001–2007
Suzuka, JP52003–2006
Yokohama, JP11995
Yokkaichi, JP11992