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Inventor

Jyonu Ri

Inventor
Tokyo, JP

Overview

2→
Patents
2007–2009
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
7,485,923'SOI semiconductor device with improved halo region and manufacturing method of the same'20097,211,517'Semiconductor device and method that includes reverse tapering multiple layers'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2009Patents assigned to NEC CORP (2)· patent assignee history
2007–2009Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP22007–2009
Locations
LocationPatentsSpan
Tokyo, JP22007–2009