Inventor
Dai Nakamura
Inventor
Kawasaki, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores39%
H10BElectronic memory devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01LSemiconductor devices12%
B23KSoldering or unsoldering2%
H02KDynamo-electric machines2%
H10DInorganic electric semiconductor devices2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,978,151Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate202110,431,309Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate201910,304,538Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate2019RE047355Non-volatile semiconductor storage device201910,049,745Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate20189,906,086'Rotating electric machine including a stator with a connection portion having a corner portion and method for manufacturing same'2018RE046526'Non-volatile semiconductor storage device'20179,691,484'Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate'20179,324,432'Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate'2016RE045307'Non-volatile semiconductor storage device'20148,724,391'Semiconductor memory device'20148,630,106'Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate'20148,274,837'NAND flash memory'20128,098,527'Semiconductor memory device and manufacturing method thereof'20128,077,525'Nonvolatile semiconductor memory device'20117,974,130'Semiconductor memory device and method for erasing the same'20117,974,135'Non-volatile semiconductor memory device and erasing method thereof'20117,948,797'Nonvolatile semiconductor memory device and method for operating the same'20117,911,844'Non-volatile semiconductor storage device'20117,839,679'Nonvolatile semiconductor memory'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2017Patents assigned to TOSHIBA KK (14)· patent assignee history
2010–2021Based in Kawasaki, JP· patent location history
2011–2014Patents assigned to NAKAMURA DAI (5)· patent assignee history
2012Patents assigned to FUKUDA KOICHI (1)· patent assignee history
2012–2014Based in Fujisawa, JP· patent location history
2014Patents assigned to HISADA TOSHIKI (1)· patent assignee history
2018–2021Patents assigned to TOSHIBA MEMORY CORP (5)· patent assignee history
2018Based in Hitachinaka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 14 | 2010–2017 |
| NAKAMURA DAIself | 5 | 2011–2014 |
| TOSHIBA MEMORY CORP | 5 | 2018–2021 |
| FUKUDA KOICHI | 1 | 2012 |
| HISADA TOSHIKI | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 17 | 2010–2021 |
| Fujisawa, JP | 2 | 2012–2014 |
| Hitachinaka, JP | 1 | 2018 |