Inventor

Keith Kuang-Kuo Koai

Inventor
Los Gatos, CA, US

Overview

21→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01JElectric discharge tubes or discharge lamps14%
H01LSemiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
C25DProcesses for the electrolytic or electrophoretic production of coatings4%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G05BControl or regulating systems in general2%
G11CStatic stores2%
H10BElectronic memory devices2%
PatentTitleYear
11,067,515Apparatus and method for inspecting a wafer process chamber202110,876,208Apparatus and method for fabricating a semiconductor device202010,868,241Apparatus for polarizing a semiconductor wafer and method for fabricating a magnetic semiconductor device202010,784,087Aluminum apparatus with aluminum oxide layer and method for forming the same202010,626,499Deposition device structure202010,269,573Device and method for manufacturing a semiconductor structure201910,262,839Aluminum apparatus with aluminum oxide layer and method for forming the same20199,548,241'Semiconductor device metallization systems and methods'20179,318,364'Semiconductor device metallization systems and methods'20169,281,221'Ultra-high vacuum (UHV) wafer processing'20167,871,470'Substrate support lift mechanism'2011D0568914'Substrate support lift pin'20086,887,317'Reduced friction lift pin'20056,410,089'Chemical vapor deposition of copper using profiled distribution of showerhead apertures'20026,364,949'300 mm CVD chamber design for metal-organic thin film deposition'20026,365,495'Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature'20026,176,930'Apparatus and method for controlling a flow of process material to a deposition chamber'20016,159,299'Wafer pedestal with a purge ring'20006,106,625'Reactor useful for chemical vapor deposition of titanium nitride'20006,063,441'Processing chamber and method for confining plasma'20006,050,506'Pattern of apertures in a showerhead for chemical vapor deposition'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2011Patents assigned to APPLIED MATERIALS INC (11)· patent assignee history
2000–2011Based in Los Gatos, CA, US· patent location history
2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2016Based in Taoyuan, TW· patent location history
2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2017–2020Based in Zhubei City, TW· patent location history
2019–2020Based in Hsinchu County, TW· patent location history
2021Based in Zhubei, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC112000–2011
TAIWAN SEMICONDUCTOR MFG CO LTD82017–2021
TAIWAN SEMICONDUCTOR MFG22016
Locations
LocationPatentsSpan
Los Gatos, California, US112000–2011
Zhubei City, TW42017–2020
Hsinchu County, TW32019–2020
Zhubei, TW12021
Taoyuan, TW12016