LexDanaLexDanabeta
Inventor

April D. Schricker

Inventor
Palo Alto, CA, US

Overview

54→
Patents
2006–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices21%
H10NElectric solid-state devices not otherwise provided for20%
G11CStatic stores11%
H01LSemiconductor devices9%
B82YSpecific uses or applications of nanostructures8%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10DInorganic electric semiconductor devices4%
H10KOrganic electric solid-state devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,892,385LED fabrication using high-refractive-index adhesives202110,790,417Wavelength converted semiconductor light emitting device202010,734,543Method for attaching ceramic phosphor plates on light-emitting device (LED) dies using a dicing tape, method to form a dicing tape, and dicing tape202010,270,013Wavelength converted semiconductor light emitting device201910,211,374Light emitting device with reflective sidewall201910,205,067LED with ceramic green phosphor and protected red phosphor layer201910,121,770Device with multiple, stacked light emitting devices20189,935,244Light emitting device including a filter and a protective layer20189,761,768'Wavelength converted semiconductor light emitting device'20179,666,771'Method of forming a wavelength converted light emitting device'20179,543,478'Light emitting device including a filter and a protective layer'20179,379,293'LED with ceramic green phosphor and protected red phosphor layer'20169,324,926'Wavelength converted light emitting device'20169,178,149'Surface treatment to improve resistive-switching characteristics'20159,047,949'Non-volatile storage system using opposite polarity programming signals for MIM memory cell'20158,913,417'Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same'20148,878,235'Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same'20148,872,151'Surface treatment to improve resistive-switching characteristics'20148,816,315'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20148,809,114'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20148,699,259'Non-volatile storage system using opposite polarity programming signals for MIM memory cell'20148,680,503'Carbon nano-film reversible resistance-switchable elements and methods of forming the same'20148,637,845'Optimized electrodes for Re-RAM'20148,623,509'Thermometric carbon composites'20148,569,730'Carbon-based interface layer for a memory device and methods of forming the same'20138,558,220'Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same'20138,536,015'Memory cell that includes a carbon-based memory element and methods of forming the same'20138,530,318'Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same'20138,507,315'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20138,481,394'Memory cell that includes a carbon-based memory element and methods of forming the same'20138,467,224'Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom'20138,465,996'Surface treatment to improve resistive-switching characteristics'20138,445,385'Methods for etching carbon nano-tube films for use in non-volatile memories'20138,431,417'Methods for increasing carbon nano-tube (CNT) yield in memory devices'20138,421,050'Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same'20138,373,150'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20138,309,407'Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices'20128,304,284'Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same'20128,304,754'Metal oxide materials and electrodes for Re-RAM'20128,274,066'Surface treatment to improve resistive-switching characteristics'20128,263,420'Optimized electrodes for Re-RAM'20128,236,623'Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same'20128,233,308'Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same'20128,183,121'Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance'20128,173,486'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20128,133,793'Carbon nano-film reversible resistance-switchable elements and methods of forming the same'20128,062,918'Surface treatment to improve resistive-switching characteristics'20117,977,667'Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same'20117,935,594'Damascene process for carbon memory element with MIIM diode'20117,902,537'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20117,846,785'Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same'20107,824,956'Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same'20107,615,439'Damascene process for carbon memory element with MIIM diode'20097,097,788'Conducting inks'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2014Based in Fremont, CA, US· patent location history
2010–2015Patents assigned to SANDISK 3D LLC (33)· patent assignee history
2011–2014Patents assigned to SCHRICKER APRIL (10)· patent assignee history
2011–2020Based in Palo Alto, CA, US· patent location history
2012–2014Patents assigned to SCHRICKER APRIL D (18)· patent assignee history
2016–2017Based in Eindhoven, NL· patent location history
2017–2020Patents assigned to KONINKLIJKE PHILIPS NV (6)· patent assignee history
2017–2021Based in San Jose, CA, US· patent location history
2018Based in Aachen, DE· patent location history
2019–2021Patents assigned to LUMILEDS LLC (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SANDISK 3D LLC332010–2015
SCHRICKER APRIL Dself182012–2014
SCHRICKER APRILself102011–2014
KONINKLIJKE PHILIPS NV62017–2020
LUMILEDS LLC62019–2021
Locations
LocationPatentsSpan
Palo Alto, California, US322011–2020
Fremont, California, US132009–2014
San Jose, California, US42017–2021
Eindhoven, NL22016–2017
Aachen, DE12018