LexDanaLexDanabeta
Inventor

Tetsuya Takeuchi

Inventor
Yokohama, JP

Overview

68→
Patents
1986–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light18%
H10HInorganic light-emitting semiconductor devices having potential barriers18%
B82YSpecific uses or applications of nanostructures9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H01LSemiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B41JTypewriters3%
H10DInorganic electric semiconductor devices3%
Y10TTechnical subjects covered by former us classification2%
C30BSingle-crystal growth2%
PatentTitleYear
10,833,223Group III nitride semiconductor light-emitting device and production method therefor202010,593,831Nitride semiconductor multilayer film reflector and light-emitting device using the same202010,411,438Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element201910,116,120Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element20189,847,449Nitride semiconductor light-emitting device with periodic gain active layers20179,716,209'Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device'20179,666,753'Nitride semiconductor light emitting device and method of fabricating the same'20179,470,940'Semiconductor device and method for fabricating semiconductor device'20169,437,775'Nitride semiconductor light-emitting device'20168,901,743'Fabrication of semiconductor device including chemical mechanical polishing'20148,653,501'Emitting device and manufacturing method therefor'20148,545,648'Method for producing heat insulating laminate structure, heat insulating laminate structure, and transparent laminate film for the same'20138,455,086'Transparent laminate film and method for producing same'20138,416,824'Surface emitting laser with current constriction layer and multiple active regions'20138,249,125'Optical device including multilayer reflector and vertical cavity surface emitting laser'20128,228,965'Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array'20128,164,104'Light emitting element array and image forming apparatus'20128,116,345'Surface emitting laser and image forming apparatus'20128,116,344'Red surface emitting laser element, image forming device, and image display apparatus'20128,073,035'Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array'20118,031,753'Red surface emitting laser element, image forming device, and image display apparatus'20117,967,654'Organic electroluminescence element, process for preparation of the same, and electrode film'20117,924,900'Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array'20117,839,913'Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser'20107,830,944'Surface-emitting laser and optical apparatus formed by using surface-emitting laser'20107,809,040'Red surface emitting laser element, image forming device, and image display apparatus'20107,807,485'Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process'20107,796,662'Vertical cavity surface emitting laser and image forming apparatus using the vertical cavity surface emitting laser'20107,795,048'Method of measuring film thickness and method of manufacturing semiconductor device'20107,786,495'Light-emitting element array and image forming apparatus'20107,768,021'Light emitting element array and image forming apparatus'20107,756,187'Optical device including multilayer reflector and vertical cavity surface emitting laser'20107,609,745'Semiconductor laser apparatus'20097,562,695'Cooling device and method of manufacturing the same'20097,490,661'Heat exchanger'20097,491,976'Light-emitting element array and image forming apparatus'20097,345,324'Light emitting diodes with graded composition active regions'20087,311,429'Vehicle lamp'20077,096,786'Ink fountain apparatus for rotary printing press'20067,033,938'Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region'20066,955,933'Light emitting diodes with graded composition active regions'20056,934,312'System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom'20056,887,727'System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element'20056,878,970'Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells'20056,878,959'Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice'20056,853,663'Efficiency GaN-based light emitting devices'20056,849,472'Nitride semiconductor device with reduced polarization fields'20056,829,273'Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same'20046,813,295'Asymmetric InGaAsN vertical cavity surface emitting lasers'20046,800,143'Supermagnetostrictive alloy and method of preparation thereof'20046,764,926'Method for obtaining high quality InGaAsN semiconductor devices'20046,756,325'Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region'20046,696,198'Flat battery'20046,690,700'Nitride semiconductor device'20046,683,327'Nucleation layer for improved light extraction from light emitting devices'20046,569,704'Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency'20036,537,513'Semiconductor substrate and method for making the same'20036,534,791'Epitaxial aluminium-gallium nitride semiconductor substrate'20036,451,478'Coin-shaped battery and method for producing the same'20026,265,475'High damping material composition'20016,239,490'P-contact for a Group III-nitride semiconductor device and method of making same'20016,229,151'Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency'20016,131,647'Cooling system for cooling hot object in container'20005,403,436'Plasma treating method using hydrogen gas'19955,389,571'Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer'19955,342,035'Paper feed apparatus for sheet-fed press'19945,239,188'Gallium nitride base semiconductor device'19934,621,433'Verticality detecting apparatus for plumbing columns'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2020Based in Nagoya, JP· patent location history
2001–2005Patents assigned to AGILENT TECHNOLOGIES INC (12)· patent assignee history
2001–2004Based in Kanagawa, JP· patent location history
2001–2013Based in Komaki, JP· patent location history
2003–2005Patents assigned to LUMILEDS LIGHTING LLC (6)· patent assignee history
2004–2008Based in Sunnyvale, CA, US· patent location history
2006–2014Patents assigned to TAKEUCHI TETSUYA (11)· patent assignee history
2009–2014Patents assigned to CANON KK (19)· patent assignee history
2009–2014Based in Yokohama, JP· patent location history
2016–2020Patents assigned to UNIV MEIJO (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CANON KK192009–2014
AGILENT TECHNOLOGIES INC122001–2005
TAKEUCHI TETSUYAself112006–2014
UNIV MEIJO82016–2020
LUMILEDS LIGHTING LLC62003–2005
Locations
LocationPatentsSpan
Yokohama, JP212009–2014
Sunnyvale, California, US112004–2008
Nagoya, JP101993–2020
Kanagawa, JP42001–2004
Komaki, JP32001–2013