Inventor

Harsono S. Simka

Inventor
Saratoga, CA, US

Overview

26→
Patents
2007–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
C23CCoating metallic material13%
H01LSemiconductor devices12%
H10DInorganic electric semiconductor devices9%
G06FElectric digital data processing4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
G09CCiphering or deciphering apparatus for cryptographic or other purposes involving the need for secrecy3%
H04LTransmission of digital information, e.g. telegraphic communication3%
PatentTitleYear
11,087,055Method of screening materials using forward conducting modes202111,043,454Low resistivity interconnects with doped barrier layer for integrated circuits202110,957,579Integrated circuit devices including a via and methods of forming the same202110,916,513Method and system for providing a reverse engineering resistant hardware embedded security module202110,825,723Semiconductor device and method for making the same202010,763,207Interconnects having long grains and methods of manufacturing the same202010,381,315Method and system for providing a reverse-engineering resistant hardware embedded security module20199,932,671Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)20188,779,589'Liner layers for metal interconnects'20148,425,987'Surface charge enhanced atomic layer deposition of pure metallic films'20138,344,352'Using unstable nitrides to form semiconductor structures'20138,319,287'Tunable gate electrode work function material for transistor applications'20128,012,878'Atomic layer volatilization process for metal layers'20117,982,204'Using unstable nitrides to form semiconductor structures'20117,964,746'Copper precursors for CVD/ALD/digital CVD of copper metal films'20117,858,525'Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill'20107,851,360'Organometallic precursors for seed/barrier processes and methods thereof'20107,749,906'Using unstable nitrides to form semiconductor structures'20107,704,895'Deposition method for high-k dielectric materials'20107,682,891'Tunable gate electrode work function material for transistor applications'20107,524,765'Direct tailoring of the composition and density of ALD films'20097,476,615'Deposition process for iodine-doped ruthenium barrier layers'20097,470,617'Treating a liner layer to reduce surface oxides'20087,354,849'Catalytically enhanced atomic layer deposition process'20087,279,084'Apparatus having plating solution container with current applying anodes'20077,220,671'Organometallic precursors for the chemical phase deposition of metal films in interconnect applications'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2018Patents assigned to INTEL CORP (18)· patent assignee history
2007–2021Based in Saratoga, CA, US· patent location history
2012–2014Patents assigned to SIMKA HARSONO S (4)· patent assignee history
2012–2013Patents assigned to DOMINGUEZ JUAN E (3)· patent assignee history
2012–2013Patents assigned to LAVOIE ADRIEN R (3)· patent assignee history
2018Based in Saratogo, CA, US· patent location history
2019–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTEL CORP182007–2018
SAMSUNG ELECTRONICS CO LTD72019–2021
SIMKA HARSONO Sself42012–2014
DOMINGUEZ JUAN E32012–2013
LAVOIE ADRIEN R32012–2013
Locations
LocationPatentsSpan
Saratoga, California, US252007–2021
Saratogo, California, US12018