Inventor

Hans-Joachim Schulze

Inventor

Taufkirchen, DE

Overview

1988–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 535 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices34%

H01LSemiconductor devices25%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

C30BSingle-crystal growth2%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

H03KPulse technique1%

H10BElectronic memory devices1%

Y10TTechnical subjects covered by former us classification1%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%

PatentTitleYear

11,121,242Method of operating a semiconductor device having a desaturation channel structure2021 11,107,893Method for forming a semiconductor device and a semiconductor device2021 11,107,732Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers2021 11,101,343Silicon carbide field-effect transistor including shielding areas2021 11,094,779Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type2021 11,081,393Method for splitting semiconductor wafers2021 11,081,544Method of manufacturing a semiconductor device comprising first and second field stop zone portions2021 11,069,626Molding compound and semiconductor package with a molding compound2021 11,063,142Semiconductor device including silicon carbide body and method of manufacturing2021 11,043,384Method of manufacturing a semiconductor device by using ion beam technique2021 11,038,028Semiconductor device and manufacturing method2021 11,031,483Forming semiconductor devices in silicon carbide2021 11,018,252Power semiconductor transistor2021 11,018,249Semiconductor component with edge termination region2021 11,018,051Power semiconductor device with reliably verifiable p-contact and method2021 10,868,159Power semiconductor device2020 10,837,120Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device2020 10,833,218Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing2020 10,825,716Method for manufacturing a semiconductor device2020 10,790,384Power semiconductor device having overvoltage protection2020 10,777,506Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device2020 10,734,507Method of operating a semiconductor device having a desaturation channel structure and related methods of manufacture2020 10,724,148Silicon ingot and method of manufacturing a silicon ingot2020 10,724,149Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device2020 10,714,377Semiconductor device and semiconductor wafer including a porous layer and method of manufacturing2020 10,707,865Switch device2020 10,700,168Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device2020 10,680,089Semiconductor device having an active trench and a body trench2020 10,679,855Method for producing a superjunction device2020 10,679,978Chip module with spatially limited thermally conductive mounting body2020 10,679,857Vertical transistor with trench gate insulator having varying thickness2020 10,672,875Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device2020 10,670,474Temperature sensor2020 10,665,705Semiconductor device with deep diffusion region2020 10,665,687Method for processing a semiconductor device and semiconductor device2020 10,658,497Method for manufacturing semiconductor devices with superjunction structures2020 10,651,140Semiconductor device with metal structure electrically connected to a conductive structure2020 10,651,037Method for fabricating a doped zone in a semiconductor body2020 10,643,897Method of forming a semiconductor device2020 10,644,496Semiconductor device with surge current protection2020 10,629,676Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device2020 10,622,268Apparatus and method for ion implantation2020 10,615,039Semiconductor device having a device doping region of an electrical device arrangement2020 10,607,839Method of reducing an impurity concentration in a semiconductor body2020 10,580,653Method of forming a semiconductor device2020 10,566,462Bipolar semiconductor device and manufacturing method2020 10,566,198Doping method2020 10,566,426Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer2020 10,566,424Semiconductor device, silicon wafer and method of manufacturing a silicon wafer2020 10,553,675Isolation of semiconductor device with buried cavity2020 10,546,939N-channel bipolar power semiconductor device with P-layer in the drift volume2020 10,541,301SiC-based superjunction semiconductor device2020 10,535,553Devices with backside metal structures and methods of formation thereof2020 10,535,743Metallization and its use in, in particular, an IGBT or a diode2020 10,529,809Method of manufacturing a power semiconductor device2020 10,529,838Semiconductor device having a variable carbon concentration2020 10,516,065Semiconductor devices and methods for forming semiconductor devices2019 10,497,801Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone2019 10,497,583Method for manufacturing a semiconductor device comprising etching a semiconductor material2019 10,490,656Charge-compensation semiconductor device and a manufacturing method therefor2019 10,483,384Transistor device with high current robustness2019 10,475,911Semiconductor device having a source region with chalcogen atoms2019 10,475,881Semiconductor devices with steep junctions and methods of manufacturing thereof2019 10,475,743Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device2019 10,475,910Semiconductor device having an insulated gate bipolar transistor arrangement2019 10,468,148Apparatus and method for neutron transmutation doping of semiconductor wafers2019 10,461,739Transistor device2019 10,439,025Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component2019 10,431,681Semiconductor devices and a method for forming a semiconductor device2019 10,410,911Buried insulator regions and methods of formation thereof2019 10,411,097Semiconductor component having a doped substrate layer and corresponding methods of manufacturing2019 10,403,556Semiconductor device including a heat sink structure2019 10,404,250Transistor device2019 10,396,170Semiconductor devices and methods for forming semiconductor devices2019 10,388,722Power semiconductor device termination structure2019 10,388,776Semiconductor device having an active trench and a body trench2019 10,381,467Semiconductor device with separation regions2019 10,367,067Semiconductor device having an oxygen diffusion barrier2019 10,366,895Methods for forming a semiconductor device using tilted reactive ion beam2019 10,355,116Power semiconductor device2019 10,347,723Method of manufacturing a semiconductor device having graphene material2019 10,340,335Method of forming a semiconductor device2019 10,340,264Semiconductor device comprising a clamping structure2019 10,337,117Method of manufacturing a silicon ingot and silicon ingot2019 10,332,973N-channel bipolar power semiconductor device with p-layer in the drift volume2019 10,325,804Method of wafer thinning and realizing backside metal structures2019 10,325,809Methods for splitting semiconductor devices and semiconductor device2019 10,325,996Method for producing a doped semiconductor layer2019 10,317,338Method and assembly for determining the carbon content in silicon2019 10,319,599Methods of planarizing SiC surfaces2019 10,312,258Semiconductor device with buried cavities and dielectric support structures2019 10,273,597Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device2019 10,276,656Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure2019 10,269,896Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer2019 10,263,101Semiconductor device with deep diffusion region2019 10,249,746Bipolar transistor with superjunction structure2019 10,243,066Producing a semiconductor device by epitaxial growth2019 10,229,990Semiconductor device having a desaturation channel structure for desaturating a charge carrier concentration in an IGBT cell2019 10,224,206Bipolar transistor device with an emitter having two types of emitter regions2019 10,217,638Method for removing crystal originated particles from a crystalline silicon body using an etch process2019 10,217,837Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures2019 10,211,325Semiconductor device including undulated profile of net doping in a drift zone2019 10,211,057Transistor component with reduced short-circuit current2019 10,205,011Method for forming a semiconductor device with implanted chalcogen atoms2019 10,199,526Radiation detector and a method for forming a semiconductor device2019 10,199,332Method of manufacturing a semiconductor device comprising a support element and semiconductor device comprising a support element2019 10,192,955Semiconductor device containing oxygen-related thermal donors2019 10,186,587Power semiconductor device2019 10,177,033Methods for forming a semiconductor device and semiconductor devices2019 10,177,230Semiconductor device including at least one type of deep-level dopant2019 10,170,497Method for manufacturing an electronic device and method for operating an electronic device2019 10,164,019Semiconductor device and a method for forming a semiconductor2018 10,164,043Semiconductor diode and method for forming a semiconductor diode2018 10,158,356Switch device2018 10,153,339Semiconductor device and method for forming a semiconductor device2018 10,147,786Power semiconductor device with charge balance design2018 10,134,845Method and power semiconductor device having an insulating region arranged in an edge termination region2018 10,134,848Semiconductor device having a graphene layer, and method of manufacturing thereof2018 10,134,853Method of manufacturing a semiconductor device having an impurity concentration2018 10,134,885Semiconductor device having an active trench and a body trench2018 10,128,328Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors2018 10,121,691Semiconductor substrate arrangements and a method for forming a semiconductor substrate arrangement2018 10,109,489Method for producing a superjunction device2018 10,103,227Method for manufacturing a power semiconductor device2018 10,096,677Methods for forming a semiconductor device and a semiconductor device2018 10,090,265Semiconductor device with metal structure electrically connected to a conductive structure2018 10,083,835Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures2018 10,079,217Power semiconductor device load terminal2018 10,074,715Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device2018 10,069,016Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity2018 10,049,914Method for thinning substrates2018 10,043,866Semiconductor device and a method for forming a semiconductor device2018 10,038,105Semiconductor devices, a semiconductor diode and a method for forming a semiconductor device2018 10,038,052Semiconductor device with channelstopper and method for producing the same2018 10,037,887Method for implanting ions into a semiconductor substrate and an implantation system2018 10,026,816Semiconductor wafer and manufacturing method2018 10,020,388Insulated gate bipolar transistor including charge injection regions2018 10,020,226Method for forming a semiconductor device and a semiconductor device2018 10,014,400Semiconductor device having a defined oxygen concentration2018 10,014,383Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device2018 10,002,930Forming a contact layer on a semiconductor body2018 9,997,359Semiconductor device with rear-side insert structure2018 9,985,017Semiconductor device comprising a clamping structure2018 9,978,851n-channel bipolar power semiconductor device with p-layer in the drift volume2018 9,972,613Semiconductor device including a phase change material2018 9,972,488Method of reducing defects in an epitaxial layer2018 9,972,689Semiconductor device having a surface with ripples2018 9,972,704Method for forming a semiconductor device and a semiconductor device2018 9,960,076Devices with backside metal structures and methods of formation thereof2018 9,960,044Semiconductor device and methods for forming a semiconductor device2018 9,954,065Method of forming a semiconductor device and semiconductor device2018 9,947,741Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area2018 9,935,126Method of forming a semiconductor substrate with buried cavities and dielectric support structures2018 9,934,988Method for processing a silicon wafer2018 9,929,181'Method for manufacturing an electronic device and method for operating an electronic device'2018 9,917,186'Semiconductor device with control structure including buried portions and method of manufacturing'2018 9,917,181'Bipolar transistor with superjunction structure'2018 9,911,808'Method for forming a semiconductor device and a semiconductor device'2018 9,911,610'Semiconductor device having a metal-semiconductor junction and manufacturing therefor'2018 9,905,655'Method for reducing bipolar degradation in an SIC semiconductor device and semiconductor device'2018 9,905,634'Power semiconductor device edge structure'2018 9,899,377'Insulated gate semiconductor device with soft switching behavior'2018 9,899,504'Power semiconductor transistor having increased bipolar amplification'2018 9,887,125'Method of manufacturing a semiconductor device comprising field stop zone'2018 9,882,038'Method of manufacturing a bipolar semiconductor switch'2018 9,876,004Semiconductor component including a short-circuit structure2018 9,875,926Substrates with buried isolation layers and methods of formation thereof2018 9,876,100Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones2018 9,875,935Semiconductor device and method for producing the same2018 9,871,126'Discrete semiconductor transistor'2018 9,859,383'Schottky diode with reduced forward voltage'2018 9,859,272'Semiconductor device with a reduced band gap zone'2018 9,859,361'SiC-based superjunction semiconductor device'2018 9,859,362'Processing a semiconductor wafer'2018 9,853,137Method for forming a semiconductor device and a semiconductor device2017 9,847,229Method for forming a semiconductor device and semiconductor device2017 9,842,904'Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrate'2017 9,837,506Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures2017 9,825,131'Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors'2017 9,825,136'Semiconductor component and integrated circuit'2017 9,809,877'Ion implantation apparatus with ion beam directing unit'2017 9,799,521'Semiconductor device having areas with different conductivity types and different doping'2017 9,793,255'Power semiconductor device including a cooling material'2017 9,793,362'Semiconductor device having an impurity concentration and method of manufacturing thereof'2017 9,786,748'Semiconductor device, silicon wafer and silicon ingot'2017 9,779,931'Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device'2017 9,754,787'Method for treating a semiconductor wafer'2017 9,748,102'Semiconductor chip arrangement and method thereof'2017 9,748,374'Semiconductor device having a field-effect structure and a nitrogen concentration profile'2017 9,741,795'IGBT having at least one first type transistor cell and reduced feedback capacitance'2017 9,741,571'Bipolar transistor device with an emitter having two types of emitter regions'2017 9,728,627'Method for forming a semiconductor device and a semiconductor device'2017 9,728,395'Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen'2017 9,722,020'Super junction semiconductor device having columnar super junction regions extending into a drift layer'2017 9,721,907'Wafer edge shape for thin wafer processing'2017 9,716,227'Method of forming a graphene structure'2017 9,711,660'JFET and method of manufacturing thereof'2017 9,704,750'Method for forming a semiconductor device and a semiconductor device'2017 9,698,138'Power semiconductor device with improved stability and method for producing the same'2017 9,698,247'Method of producing a semiconductor arrangement'2017 9,691,892'High voltage transistor operable with a high gate voltage'2017 9,679,892'Method of manufacturing a reverse blocking semiconductor device'2017 9,680,005'Semiconductor device having an active trench and a body trench'2017 9,679,774'Method for removing crystal originated particles from a crystalline silicon body'2017 9,666,663'Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device'2017 9,660,029'Semiconductor device having a positive temperature coefficient structure'2017 9,653,540'Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer'2017 9,653,568'Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures'2017 9,653,296'Method for processing a semiconductor device and semiconductor device'2017 9,647,100'Semiconductor device with auxiliary structure including deep level dopants'2017 9,647,083'Producing a semiconductor device by epitaxial growth'2017 9,640,401'Method of manufacturing a semiconductor device having a rear-side insert structure'2017 9,634,086'Method of manufacturing semiconductor devices using light ion implantation and semiconductor device'2017 9,634,081'Methods for producing polysilicon resistors'2017 9,627,517'Bipolar semiconductor switch and a manufacturing method therefor'2017 9,627,209'Method for producing a semiconductor'2017 9,621,133'Method of operating a semiconductor device having an IGBT and desaturation channel structure'2017 9,613,804'Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the semiconductor devices'2017 9,608,092'Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench'2017 9,608,128'Body of doped semiconductor material having scattering centers of non-doping atoms of foreign matter disposed between two layers of opposing conductivities'2017 9,601,376'Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion'2017 9,601,368'Semiconductor device comprising an oxygen diffusion barrier and manufacturing method'2017 9,595,619'Semiconductor device with different contact regions'2017 9,595,577'Semiconductor device with trench structure and methods of manufacturing'2017 9,583,578'Semiconductor device including an edge area and method of manufacturing a semiconductor device'2017 9,576,844'Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core'2017 9,577,080'Power semiconductor device'2017 9,576,944'Semiconductor devices with transistor cells and thermoresistive element'2017 9,570,577'Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas'2017 9,570,607'Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area'2017 9,570,566'Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate'2017 9,570,576'Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation'2017 9,564,495'Semiconductor device with a semiconductor body containing hydrogen-related donors'2017 9,560,765'Electronic device, a method for manufacturing an electronic device, and a method for operating an electronic device'2017 9,559,020'Method for postdoping a semiconductor wafer'2017 9,558,933'Method for forming a semiconductor device'2017 9,553,178'Semiconductor component with an emitter control electrode'2017 9,548,399'Junction field effect transistor cell with lateral channel region'2017 9,543,405'Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure'2017 9,536,740'Increasing the doping efficiency during proton irradiation'2017 9,536,838'Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers'2017 9,536,958'Semiconductor substrate and a method of manufacturing the same'2017 9,536,999'Semiconductor device with control structure including buried portions and method of manufacturing'2017 9,525,043'Semiconductor device and method of manufacturing a semiconductor device'2016 9,515,149'Power semiconductor device'2016 9,515,066'Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device'2016 9,515,243'Temperature sensor'2016 9,508,812'Semiconductor device'2016 9,508,711'Semiconductor device with bipolar junction transistor cells'2016 9,496,351'Semiconductor chip arrangement'2016 9,496,364'Field effect semiconductor component and methods for operating and producing it'2016 9,496,346'Silicon carbide device and a method for forming a silicon carbide device'2016 9,496,337'Method for producing a semiconductor device having a beveled edge termination'2016 9,490,354'Insulated gate bipolar transistor'2016 9,472,395'Semiconductor arrangement including buried anodic oxide and manufacturing method'2016 9,449,847'Method for manufacturing a semiconductor device by thermal treatment with hydrogen'2016 9,431,490'Power semiconductor device and method'2016 9,425,063'Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device'2016 9,425,327'Junction field effect transistor cell with lateral channel region'2016 9,419,080'Semiconductor device with recombination region'2016 9,412,854'IGBT module and a circuit'2016 9,412,824'Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex'2016 9,412,813'Semiconductor body with a buried material layer and method'2016 9,412,808'Silicon carbide device and a method for manufacturing a silicon carbide device'2016 9,406,551'Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate'2016 9,406,564'Singulation through a masking structure surrounding expitaxial regions'2016 9,390,883'Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing'2016 9,385,222'Semiconductor device with insert structure at a rear side and method of manufacturing'2016 9,384,960'Method of manufacturing a semiconductor device with a continuous silicate glass structure'2016 9,373,692'Method for forming a semiconductor device with an integrated poly-diode'2016 9,362,349'Semiconductor device with charge carrier lifetime reduction means'2016 9,349,804'Composite wafer for bonding and encapsulating an SiC-based functional layer'2016 9,349,792'Super junction semiconductor device having columnar super junction regions'2016 9,312,135'Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects'2016 9,312,120'Method for processing an oxygen containing semiconductor body'2016 9,312,334'Semiconductor component'2016 9,306,010'Semiconductor arrangement'2016 9,306,011'Semiconductor device having areas with different conductivity types and different doping concentrations'2016 9,293,330'Method for producing a semiconductor'2016 9,287,377'Semiconductor device and manufacturing method'2016 9,281,360'Semiconductor device with a shielding structure'2016 9,269,769'Semiconductor component including a short-circuit structure'2016 9,269,713'Semiconductor device and method for producing the same'2016 9,263,271'Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device'2016 9,257,511'Silicon carbide device and a method for forming a silicon carbide device'2016 9,252,045'Method for manufacturing a composite wafer having a graphite core'2016 9,252,292'Semiconductor device and a method for forming a semiconductor device'2016 9,245,811'Method for postdoping a semiconductor wafer'2016 9,245,984'Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and method of manufacturing a reverse blocking semiconductor device'2016 9,246,410'Integrated power semiconductor component, production method and chopper circuit comprising integrated semiconductor component'2016 9,245,760'Methods of forming epitaxial layers on a porous semiconductor layer'2016 9,245,943'Semiconductor body with strained monocrystalline region'2016 9,236,458'Bipolar transistor and a method for manufacturing a bipolar transistor'2016 9,231,091'Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones'2016 9,224,806'Edge termination structure with trench isolation regions'2015 9,224,633'Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core'2015 9,219,144'Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device'2015 9,219,020'Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices'2015 9,218,958'Method for forming a semiconductor device'2015 9,219,143'Semiconductor device and super junction semiconductor device having semiconductor mesas'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–1989Based in Anzing, DE· patent location history

1991–2020Based in Ottobrunn, DE· patent location history

2002–2021Patents assigned to INFINEON TECHNOLOGIES AG (347)· patent assignee history

2005–2017Patents assigned to SCHULZE HANS-JOACHIM (95)· patent assignee history

2008–2016Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (115)· patent assignee history

2009–2021Based in Taufkirchen, DE· patent location history

2011Based in Ottoburn, DE· patent location history

2012–2020Patents assigned to MAUDER ANTON (41)· patent assignee history

2016–2020Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (44)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
INFINEON TECHNOLOGIES AG	347	2002–2021
INFINEON TECHNOLOGIES AUSTRIA	115	2008–2016
SCHULZE HANS-JOACHIMself	95	2005–2017
INFINEON TECHNOLOGIES AUSTRIA AG	44	2016–2020
MAUDER ANTON	41	2012–2020

Locations

Location	Patents	Span
Taufkirchen, DE	426	2009–2021
Ottobrunn, DE	106	1991–2020
Anzing, DE	2	1988–1989
Ottoburn, DE	1	2011