LexDanaLexDanabeta
Inventor

Nathan Gardner

Inventor
Sunnyvale, CA, US

Overview

68→
Patents
2006–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers31%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
LOC1410%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures4%
C30BSingle-crystal growth4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
10,797,202Indium gallium nitride red light emitting diode and method of making thereof202010,566,499Indium gallium nitride red light emitting diode and method of making thereof202010,553,767Light emitting diodes with integrated reflector for a direct view display and method of making thereof202010,483,319Pixilated display device based upon nanowire LEDs and method for making the same201910,361,341Indium gallium nitride red light emitting diode and method of making thereof201910,312,404Semiconductor light emitting device growing active layer on textured surface201910,304,997III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers201910,304,810Method of making a light emitting diode array on a backplane2019D0842880Display screen or portion thereof with a graphical user interface201910,217,911Monolithic image chip for near-to-eye display2019D0839909Display screen or portion thereof with a graphical user interface2019D0839907Display screen or portion thereof with a graphical user interface2019D0839906Display screen or portion thereof with a graphical user interface2019D0839911Display screen or portion thereof with a graphical user interface2019D0839908Display screen or portion thereof with a graphical user interface2019D0839910Display screen or portion thereof with a graphical user interface2019D0839297Display screen or portion thereof with a graphical user interface201910,177,123Light emitting diode array on a backplane and method of making thereof2019D0837254Display screen or portion thereof with a graphical user interface2019D0829757Display screen or portion thereof with animated graphical user interface2018D0829756Display screen or portion thereof with animated graphical user interface2018D0826973Display screen or portion thereof with a graphical user interface2018D0825601Display screen or portion thereof with a graphical user interface2018D0825607Display screen with a graphical user interface2018D0825602Display screen or portion thereof with a graphical user interface201810,038,115Nanowire sized opto-electronic structure and method for modifying selected portions of same201810,026,866III-nitride nanowire LED with strain modified surface active region and method of making thereof2018D0819679Display screen with a graphical user interface20189,991,414Method of forming a composite substrate20189,917,232'Monolithic image chip for near-to-eye display'20189,911,896'Semiconductor light emitting device growing active layer on textured surface'20189,761,757'III-nitride nanowire LED with strain modified surface active region and method of making thereof'20179,722,135'Nanowire sized opto-electronic structure and method for modifying selected portions of same'20179,711,687'Light emitting device with improved extraction efficiency'20179,640,724'III-nitride light emitting device with double heterostructure light emitting region'20179,634,181'Method of forming a composite substrate'20179,620,559'Monolithic image chip for near-to-eye display'20179,444,007'Nanopyramid sized opto-electronic structure and method for manufacturing of same'20169,281,442'III-nitride nanowire LED with strain modified surface active region and method of making thereof'20169,209,359'Light emitting device with improved extraction efficiency'20159,166,106'Nanowire sized opto-electronic structure and method for modifying selected portions of same'20159,012,250'Controlling pit formation in a III-nitride device'20159,000,450'Grown photonic crystals in semiconductor light emitting devices'20158,921,141'Nanopyramid sized opto-electronic structure and method for manufacturing of same'20148,847,252'III-nitride light emitting device with double heterostructure light emitting region'20148,492,244'Methods for relaxation and transfer of strained layers and structures fabricated thereby'20138,486,771'Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same'20138,481,408'Relaxation of strained layers'20138,334,155'Substrate for growing a III-V light emitting device'20128,288,186'Substrate for growing a III-V light emitting device'20128,183,577'Controlling pit formation in a III-nitride device'20128,163,575'Grown photonic crystals in semiconductor light emitting devices'20128,154,052'Light emitting device grown on wavelength converting substrate'20128,105,852'Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate'20127,981,767'Methods for relaxation and transfer of strained layers and structures fabricated thereby'20117,951,693'III-nitride light emitting devices grown on templates to reduce strain'20117,880,186'III-nitride light emitting device with double heterostructure light emitting region'20117,863,631'A1InGaP LED having reduced temperature dependence'20117,808,011'Semiconductor light emitting devices including in-plane light emitting layers'20107,663,148'III-nitride light emitting device with reduced strain light emitting layer'20107,547,908'III-nitride light emitting devices grown on templates to reduce strain'20097,544,525'AllnGaP LED having reduced temperature dependence'20097,534,638'III-nitride light emitting devices grown on templates to reduce strain'20097,244,630'A1InGaP LED having reduced temperature dependence'20077,221,000'Reverse polarization light emitting region for a semiconductor light emitting device'20077,122,839'Semiconductor light emitting devices with graded composition light emitting layers'20067,087,941'lll-phosphide light emitting devices with thin active layers'20066,995,389'Heterostructures for III-nitride light emitting devices'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2015Patents assigned to PHILIPS LUMILEDS LIGHTING CO (15)· patent assignee history
2006–2007Based in Mountain View, CA, US· patent location history
2006–2017Based in San Jose, CA, US· patent location history
2007–2020Based in Sunnyvale, CA, US· patent location history
2012–2018Patents assigned to GARDNER NATHAN F (13)· patent assignee history
2012–2018Patents assigned to KRAMES MICHAEL R (10)· patent assignee history
2014–2020Patents assigned to GLO AB (18)· patent assignee history
2018–2019Patents assigned to MX TECH INC (16)· patent assignee history
2018–2019Based in Provo, UT, US· patent location history
2018Based in Lehi, UT, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLO AB182014–2020
MX TECH INC162018–2019
PHILIPS LUMILEDS LIGHTING CO152006–2015
GARDNER NATHAN Fself132012–2018
KRAMES MICHAEL R102012–2018
Locations
LocationPatentsSpan
Sunnyvale, California, US462007–2020
Provo, UT, US142018–2019
Mountain View, California, US32006–2007
Lehi, UT, US22018
San Jose, California, US22006–2017