Inventor

WEI-YANG LEE

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 146 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H01LSemiconductor devices25%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%

B82YSpecific uses or applications of nanostructures15%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

H10BElectronic memory devices2%

G06FElectric digital data processing0%

G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes0%

G16HHealthcare informatics, i.e. information and communication technology [ict] specially adapted for the handling or processing of medical or healthcare data0%

H04LTransmission of digital information, e.g. telegraphic communication0%

PatentTitleYear

12,588,283Semiconductor structure and related methods2026 12,581,691Methods of manufacturing semiconductor devices and semiconductor devices2026 12,568,648Backside source/drain contacts and methods of forming the same2026 12,543,361Gate-all-around transistor having inner space lined by a semiconductor liner and method of forming the same2026 12,538,532Method of forming a gap under a source/drain feature of a multi-gate device2026 12,532,532Epitaxial features in semiconductor devices and method of manufacturing2026 12,527,039Semiconductor devices with enhanced carrier mobility2026 12,520,555Inner spacer for a multi-gate device and related methods2026 12,520,560Selective gate air spacer formation2026 12,520,526Semiconductor devices with modified source/drain feature and methods thereof2026 12,507,446—2025 12,501,601Method for forming different types of devices2025 12,471,306Semiconductor device active region profile and method of forming the same2025 12,464,769Semiconductor device with epitaxial bridge feature and methods of forming the same2025 12,457,770Source and drain engineering process for multigate devices2025 12,453,127Methods of manufacturing semiconductor devices and semiconductor devices2025 12,453,161Semiconductor device with air-spacer2025 12,439,651Integrated circuit structure2025 12,433,008FinFET structure with airgap and method of forming the same2025 12,432,990Epitaxial source/drain feature with enlarged lower section interfacing with backside via2025 12,426,297Method and structure for air gap inner spacer in gate-all-around devices2025 12,426,346Semiconductor device and method2025 12,408,377Semiconductor device structure with backside contact2025 12,402,364Semiconductor device structure and method for forming the same2025 12,402,354Epitaxial features in semiconductor devices and manufacturing method of the same2025 12,396,220Isolation structures in multi-gate field-effect transistors2025 12,382,660Structure and formation method of semiconductor device with embedded epitaxial structure2025 12,382,703Spacer features for nanosheet-based devices2025 12,382,692Dielectric inner spacers in multi-gate field-effect transistors2025 12,369,334Method of manufacturing a semiconductor device and a semiconductor device2025 12,369,383Semiconductor structure with gate-all-around devices and stacked FinFET devices2025 12,363,988Inner spacer features for multi-gate transistors2025 12,363,989Semiconductor device with leakage current suppression and method for forming the same2025 12,363,950Nano-FET semiconductor device and method of forming2025 12,356,662Asymmetric source/drain for backside source contact2025 12,349,393Semiconductor device transistor having multiple channels with different widths and materials2025 12,324,201Integrated circuit device with source/drain barrier2025 12,317,552Semiconductor device structure and method for forming the same2025 12,317,556Semiconductor devices and methods of manufacture2025 12,310,057Semiconductor devices including backside vias and methods of forming the same2025 12,308,287Integrated circuit structure with backside dielectric layer having air gap2025 12,302,615Epitaxial structures exposed in airgaps for semiconductor devices2025 12,278,145Semiconductor devices with a source/drain barrier layer and methods of manufacture2025 12,272,729Asymmetric source/drain for backside source contact2025 12,268,023Devices with improved operational current and reduced leakage current2025 12,266,655Transistors with recessed silicon cap and method forming same2025 12,266,576Semiconductor device and methods of manufacture2025 12,237,390Low resistance contact feature2025 12,237,399Nano-FET transistor with alternating nanostructures and method of forming thereof2025 12,237,230Semiconductor device with leakage current suppression and method for forming the same2025 12,237,403Structure of a fin field effect transistor (FinFET) comprising epitaxial structures2025 12,237,232Methods for forming source/drain features2025 12,218,138Air gap formation between gate spacer and epitaxy structure2025 12,211,749Cut EPI process and structures2025 12,191,369Source and drain engineering process for multigate devices2025 12,191,370Semiconductor device with tunable channel layer usage and methods of fabrication thereof2025 12,176,400Backside contact with air spacer2024 12,154,947Methods of forming epitaxial source/drain features in semiconductor devices2024 12,142,647Self-aligning backside contact process and devices thereof2024 12,136,658Integrated circuit with doped low-k sidewall spacers for gate stacks2024 12,125,889Source/drain contact with low-k contact etch stop layer and method of fabricating thereof2024 12,107,165Semiconductor device structure with cap layer2024 12,087,837Semiconductor device with backside contact and methods of forming such2024 12,080,775Semiconductor device and forming method thereof2024 12,080,800Semiconductor devices with modified source/drain feature and methods thereof2024 12,068,204Methods of forming epitaxial structures in fin-like field effect transistors2024 12,068,371Method for FinFET LDD doping2024 12,068,389Semiconductor device including gas spacers and method of manufacture2024 12,062,692Tapered dielectric layer for preventing electrical shorting between gate and back side via2024 12,051,732Semiconductor structure and method for forming the same2024 12,051,628Semiconductor device with funnel shape spacer and methods of forming the same2024 12,040,407Semiconductor devices including backside vias and methods of forming the same2024 12,034,048Source/drain features2024 12,027,626Semiconductor device active region profile and method of forming the same2024 12,021,133Inner spacer liner2024 12,015,060Structure and formation method of semiconductor device with backside contact2024 12,002,845Method of manufacturing a semiconductor device and a semiconductor device2024 11,996,467Method for epitaxial growth and device2024 11,984,489Air spacer for a gate structure of a transistor2024 11,973,122Nano-FET semiconductor device and method of forming2024 11,949,002Semiconductor device and method2024 11,935,781Integrated circuit structure with backside dielectric layer having air gap2024 11,923,409Epitaxial structures exposed in airgaps for semiconductor devices2024 11,917,803Method for forming different types of devices2024 11,916,110Semiconductor device having nanosheet transistor and methods of fabrication thereof2024 11,908,748Semiconductor devices and methods of forming the same2024 11,901,236Semiconductor structure with gate-all-around devices and stacked FinFET devices2024 11,901,410Semiconductor devices and methods of manufacture2024 11,894,421Integrated circuit device with source/drain barrier2024 11,854,688Semiconductor device and method2023 11,855,167Structure and formation method of semiconductor device with nanosheet structure2023 11,855,220Method and structure for air gap inner spacer in gate-all-around devices2023 11,855,225Semiconductor device with epitaxial bridge feature and methods of forming the same2023 11,855,097Air gap formation between gate spacer and epitaxy structure2023 11,830,922Semiconductor device with air-spacer2023 11,810,825Methods of forming epitaxial structures in fin-like field effect transistors2023 11,799,002Semiconductor devices and methods of forming the same2023 11,798,996Backside contact with air spacer2023 11,769,820Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region2023 11,749,719Source/drain features2023 11,735,641FinFET structure with airgap and method of forming the same2023 11,735,660Method of forming semiconductor device2023 11,728,344Hybrid SRAM design with nano-structures2023 11,728,223Semiconductor device and methods of manufacture2023 11,710,792Semiconductor structure with improved source drain epitaxy2023 11,699,737Integrated circuit with doped low-k side wall spacers for gate spacers2023 11,694,933Methods of forming metal gate spacer2023 11,688,793Integrated circuit structure and manufacturing method thereof2023 11,688,794Method for epitaxial growth and device2023 11,677,028PMOS FinFET2023 11,631,736Epitaxial source/drain feature with enlarged lower section interfacing with backside via2023 11,631,746Semiconductor device and method of manufacture2023 11,626,505Dielectric inner spacers in multi-gate field-effect transistors2023 11,626,508Structure of a fin field effect transistor (FinFET)2023 11,575,047Semiconductor device active region profile and method of forming the same2023 11,569,386Method for forming semiconductor device structure with cap layer2023 11,532,749Semiconductor structure with blocking layer2022 11,515,211Cut EPI process and structures2022 11,508,827Air spacer for a gate structure of a transistor2022 11,508,736Method for forming different types of devices2022 11,502,182Selective gate air spacer formation2022 11,502,005Semiconductor devices and methods of forming the same2022 11,495,606FinFET having non-merging epitaxially grown source/drains2022 11,488,874Semiconductor device with funnel shape spacer and methods of forming the same2022 11,456,295Air gap formation between gate spacer and epitaxy structure2022 11,450,559Integrated circuit structure with backside dielectric layer having air gap2022 11,444,178Inner spacer liner2022 11,444,162Backside contact with air spacer2022 11,417,767Semiconductor devices including backside vias and methods of forming the same2022 11,398,553Source/drain features2022 11,387,322Semiconductor device having nanosheet transistor and methods of fabrication thereof2022 11,374,128Method and structure for air gap inner spacer in gate-all-around devices2022 11,362,199Semiconductor device and method2022 11,355,400Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET2022 11,328,960Semiconductor structure with gate-all-around devices and stacked FinFET devices2022 11,296,077Transistors with recessed silicon cap and method forming same2022 11,289,574Methods of forming epitaxial source/drain features in semiconductor devices2022 11,257,928Method for epitaxial growth and device2022 11,217,490Source/drain features with an etch stop layer2022 11,217,486Semiconductor device and method2022 11,211,455Formation of dislocations in source and drain regions of FinFET devices2021 11,205,597Semiconductor device and method2021 11,201,228Semiconductor device with air-spacer2021 11,189,705Methods of reducing parasitic capacitance in multi-gate field-effect transistors2021 11,189,706FinFET structure with airgap and method of forming the same2021 11,152,486FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (146)· patent assignee history

2021–2026Based in TW· patent location history

2024Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD V (1)· patent assignee history

2024Patents assigned to TAIWAN SEMINCODCUTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	146	2021–2026
TAIWAN SEMICONDUCTOR MFG CO LTD V	1	2024
TAIWAN SEMINCODCUTOR MFG COMPANY LTD	1	2024

Locations

Location	Patents	Span
TW	146	2021–2026