Inventor
Kai-Hung Yu
Inventor
Watervliet, NY, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C23CCoating metallic material9%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations6%
A61KPreparations for medical, dental or toiletry purposes5%
H04LTransmission of digital information, e.g. telegraphic communication5%
H10DInorganic electric semiconductor devices5%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses4%
C07CAcyclic or carbocyclic compounds3%
PatentTitleYear
10,861,744Platform and method of operating for integrated end-to-end CMP-less interconnect process202010,770,479Three-dimensional device and method of forming the same202010,700,009Ruthenium metal feature fill for interconnects202010,580,691Method of integrated circuit fabrication with dual metal power rail202010,541,174Interconnect structure and method of forming the same202010,498,523Multipath clock and data recovery201910,460,988Removal method and processing method201910,425,124Repeaters with fast transitions from low-power standby to low-frequency signal transmission201910,378,105Selective deposition with surface treatment201910,291,241Referenceless clock and data recovery circuits201910,157,784Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization201810,056,328Ruthenium metal feature fill for interconnects201810,027,332Referenceless clock and data recovery circuits201810,014,213Selective bottom-up metal feature filling for interconnects20189,711,449'Ruthenium metal feature fill for interconnects'20179,607,888'Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling'20179,425,093'Copper wiring forming method, film forming system, and storage medium'20169,408,556'Integrated analysis device for simultaneously detecting EBCs and VOCs in human exhaled breath'20166,727,288'Method for treating bone fracture'20046,713,513'Method for treating cartilage related diseases'20046,548,687'Chromium L-threonate, process for preparation of the same and their use'20036,313,170'L-threonate ferrous, as well as pharmaceutical composition and use for improving and treating human anemia thereof'20016,077,872'Use of calcium L-threonate in preventing, inhibiting and curing osteoporosis and rickets'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000Patents assigned to BEIJING JUENG ASIA PACIFIC LIF (1)· patent assignee history
2000–2004Based in Beijing, CN· patent location history
2004Patents assigned to JUNENG INDUSTRY CO LTD (2)· patent assignee history
2016–2020Patents assigned to TOKYO ELECTRON LTD (13)· patent assignee history
2016–2020Based in Albany, NY, US· patent location history
2016Based in Zhejiang, CN· patent location history
2017–2020Based in Watervliet, NY, US· patent location history
2018–2019Patents assigned to PERICOM SEMICONDUCTOR CORP (3)· patent assignee history
2018–2019Based in San Jose, CA, US· patent location history
2019Patents assigned to DIODES INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 13 | 2016–2020 |
| PERICOM SEMICONDUCTOR CORP | 3 | 2018–2019 |
| DIODES INC | 2 | 2019 |
| JUNENG INDUSTRY CO LTD | 2 | 2004 |
| BEIJING JUENG ASIA PACIFIC LIF | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watervliet, New York, US | 8 | 2017–2020 |
| Albany, New York, US | 5 | 2016–2020 |
| Beijing, CN | 5 | 2000–2004 |
| San Jose, California, US | 4 | 2018–2019 |
| Zhejiang, CN | 1 | 2016 |