Inventor
Mao-Chieh Chen
Inventor
Hsinchu, TW
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1040%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
5,670,016'Method for cleaning substrate prior to tungsten deposition'19975,457,069'Process for fabricating device having titanium-tungsten barrier layer and silicide layer contacted shallow junction simultaneously formed'19955,024,954'Method of improving high temperature stability of PTSI/SI structure'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1997Patents assigned to NAT SCIENCE COUNCIL (3)· patent assignee history
1991–1995Based in Hsinchu, TW· patent location history
1997Based in Chen Zhou, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT SCIENCE COUNCIL | 3 | 1991–1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 2 | 1991–1995 |
| Chen Zhou, CN | 1 | 1997 |