Inventor
Frederick P. Giles
Inventor
San Jose, CA, US
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices73%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
PatentTitleYear
7,494,876'Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same'20097,012,005'Self-aligned differential oxidation in trenches by ion implantation'20066,921,697'Method for making trench MIS device with reduced gate-to-drain capacitance'20056,903,412'Trench MIS device with graduated gate oxide layer'20056,882,000'Trench MIS device with reduced gate-to-drain capacitance'20056,875,657'Method of fabricating trench MIS device with graduated gate oxide layer'20056,849,898'Trench MIS device with active trench corners and thick bottom oxide'20056,709,930'Thicker oxide formation at the trench bottom by selective oxide deposition'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2006Patents assigned to SILICONIX INC (7)· patent assignee history
2004–2009Based in San Jose, CA, US· patent location history
2009Patents assigned to VISHAY SILICONIX (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SILICONIX INC | 7 | 2004–2006 |
| VISHAY SILICONIX | 1 | 2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 8 | 2004–2009 |