Inventor

Motosuke Miyoshi

Inventor

Tokyo, JP

Overview

48→

Patents

1985–2010

Patent span

Electricity

Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary

H01JElectric discharge tubes or discharge lamps48%

G01NInvestigating or analysing materials by determining their chemical or physical properties8%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

B82YSpecific uses or applications of nanostructures6%

G01RMeasuring electric variables6%

B05DProcesses for applying fluent materials to surfaces, in general3%

C23CCoating metallic material3%

G01BMeasuring length, thickness or similar linear dimensions3%

Y10TTechnical subjects covered by former us classification3%

PatentTitleYear

7,847,250'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'2010 7,649,980'X-ray source'2010 7,462,829'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'2008 7,211,796'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'2007 7,193,221'Electronic optical lens barrel and production method therefor'2007 6,991,878'Photomask repair method and apparatus'2006 6,815,698'Charged particle beam exposure system'2004 6,768,112'Substrate inspection system and method for controlling same'2004 6,563,114'Substrate inspecting system using electron beam and substrate inspecting method using electron beam'2003 6,563,308'Eddy current loss measuring sensor, thickness measuring system, thickness measuring method, and recorded medium'2003 6,525,328'Electron beam lithography system and pattern writing method'2003 6,515,296'Pattern dimension measuring system and pattern dimension measuring method'2003 6,495,841'Charged beam drawing apparatus'2002 6,414,323'Charged particle beam apparatus and method of controlling charged particle beam'2002 6,410,439'Semiconductor polishing apparatus and method for chemical/mechanical polishing of films'2002 6,265,719'Inspection method and apparatus using electron beam'2001 6,259,094'Electron beam inspection method and apparatus'2001 6,171,760'Lithographic method utilizing charged particle beam exposure and fluorescent film'2001 6,038,018'Substrate inspecting apparatus, substrate inspecting system having the same apparatus and substrate inspecting method'2000 5,818,217'Electron beam irradiating apparatus and electric signal detecting apparatus'1998 5,639,308'Plasma apparatus'1997 5,639,699'Focused ion beam deposition using TMCTS'1997 5,576,833'Wafer pattern defect detection method and apparatus therefor'1996 5,569,392'Method and apparatus for repairing defect on plane surface of phase shift mask'1996 5,548,183'Magnetic field immersion type electron gun'1996 5,535,508'Method for producing an electrostatic lens'1996 5,498,874'Defect detecting apparatus and method'1996 5,491,339'Charged particle detection device and charged particle radiation apparatus'1996 5,444,256'Electrostatic lens and method for producing the same'1995 5,429,730'Method of repairing defect of structure'1995 5,413,663'Plasma processing apparatus'1995 5,399,860'Electron optic column and scanning electron microscope'1995 5,371,371'Magnetic immersion field emission electron gun systems capable of reducing aberration of electrostatic lens'1994 5,362,968'Optic column having particular major/minor axis magnification ratio'1994 5,359,197'Apparatus and method of aligning electron beam of scanning electron microscope'1994 5,315,119'Electron beam irradiating apparatus and electric signal detecting apparatus'1994 5,293,045'Electrostatic lens'1994 5,138,169'Method and apparatus for irradiating low-energy electrons'1992 5,030,908'Method of testing semiconductor elements and apparatus for testing the same'1991 5,029,250'Pattern configuration measuring apparatus'1991 5,021,702'Electron beam apparatus including a plurality of ion pump blocks'1991 4,912,052'Method of testing semiconductor elements'1990 4,902,131'Surface inspection method and apparatus therefor'1990 4,890,029'Electron beam apparatus including plurality of ion pump blocks'1989 4,807,159'Apparatus and method for controlling irradiation of an electron beam at a fixed position in an electron beam tester system'1989 4,800,268'Method and apparatus for scanning a laser beam to examine the surface of semiconductor wafer'1989 4,562,455'Semiconductor element'1985 4,538,065'Stroboscopic scanning electron microscope'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2004Patents assigned to TOKYO SHIBAURA ELECTRIC CO (3)· patent assignee history

1985–1991Based in Fujisawa, JP· patent location history

1989–2010Patents assigned to TOSHIBA KK (43)· patent assignee history

1989–2010Based in Tokyo, JP· patent location history

1994–2001Based in Minato-ku, JP· patent location history

1995Patents assigned to TOKYO ELECTRON LTD (1)· patent assignee history

2007Patents assigned to TOUDAI TLO LTD (1)· patent assignee history

2010Patents assigned to TOSHIBA ELECTRON TUBES & DEVIC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	43	1989–2010
TOKYO SHIBAURA ELECTRIC CO	3	1985–2004
TOKYO ELECTRON LTD	1	1995
TOSHIBA ELECTRON TUBES & DEVIC	1	2010
TOUDAI TLO LTD	1	2007

Locations

Location	Patents	Span
Tokyo, JP	34	1989–2010
Minato-ku, JP	8	1994–2001
Fujisawa, JP	6	1985–1991