Inventor
Chengwei Cao
Inventor
Shanghai, CN
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
B82YSpecific uses or applications of nanostructures17%
G09GArrangements or circuits for control of indicating devices using static means to present variable information17%
G11CStatic stores17%
PatentTitleYear
10,971,104Shift register and method for driving the same, gate driving circuit, and display device20218,685,788'Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof'20148,486,754'Method for manufacturing a gate-control diode semiconductor device'20138,426,271'Method for manufacturing a gate-control diode semiconductor memory device'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2014Patents assigned to CAO CHENGWEI (3)· patent assignee history
2013–2014Patents assigned to UNIV FUDAN (3)· patent assignee history
2013–2014Patents assigned to WANG PENGFEI (3)· patent assignee history
2013–2014Patents assigned to ZHANG WEI (3)· patent assignee history
2013Patents assigned to SUN QINGQING (2)· patent assignee history
2013–2014Based in Shanghai, CN· patent location history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CAO CHENGWEIself | 3 | 2013–2014 |
| UNIV FUDAN | 3 | 2013–2014 |
| WANG PENGFEI | 3 | 2013–2014 |
| ZHANG WEI | 3 | 2013–2014 |
| SUN QINGQING | 2 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shanghai, CN | 3 | 2013–2014 |
| Beijing, CN | 1 | 2021 |