Inventor

Ivo Raaijmakers

Inventor

Bilthoven, NL

Overview

1990–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 111 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

C23CCoating metallic material20%

C30BSingle-crystal growth10%

H10DInorganic electric semiconductor devices9%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H01JElectric discharge tubes or discharge lamps6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

Y10TTechnical subjects covered by former us classification4%

B82YSpecific uses or applications of nanostructures1%

B23PMetal-working not otherwise provided for1%

PatentTitleYear

11,094,535Selective passivation and selective deposition2021 10,456,808Selective deposition of metals, metal oxides, and dielectrics2019 9,895,715'Selective deposition of metals, metal oxides, and dielectrics'2018 9,023,737'Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment'2015 8,530,340'Epitaxial semiconductor deposition methods and structures'2013 8,343,583'Method for vaporizing non-gaseous precursor in a fluidized bed'2013 8,317,921'In situ growth of oxide and silicon layers'2012 8,293,597'Selective silicide process'2012 7,981,791'Thin films'2011 7,927,942'Selective silicide process'2011 7,921,805'Deposition from liquid sources'2011 7,893,433'Thin films and methods of making them'2011 7,732,331'Copper interconnect structure having stuffed diffusion barrier'2010 7,682,947'Epitaxial semiconductor deposition methods and structures'2010 7,674,728'Deposition from liquid sources'2010 7,670,944'Conformal lining layers for damascene metallization'2010 7,465,658'Oxygen bridge structures and methods to form oxygen bridge structures'2008 7,452,757'Silicon-on-insulator structures and methods'2008 7,431,767'Apparatus and method for growth of a thin film'2008 7,419,903'Thin films'2008 7,402,504'Epitaxial semiconductor deposition methods and structures'2008 7,323,422'Dielectric layers and methods of forming the same'2008 7,285,500'Thin films and methods of making them'2007 7,276,774'Trench isolation structures for integrated circuits'2007 7,253,084'Deposition from liquid sources'2007 7,248,931'Semiconductor wafer position shift measurement and correction'2007 7,238,595'Epitaxial semiconductor deposition methods and structures'2007 7,231,141'High temperature drop-off of a substrate'2007 7,220,669'Thin films for magnetic device'2007 7,141,499'Apparatus and method for growth of a thin film'2006 7,115,521'Epitaxial semiconductor deposition methods and structures'2006 7,112,538'In situ growth of oxide and silicon layers'2006 7,105,055'In situ growth of oxide and silicon layers'2006 7,102,235'Conformal lining layers for damascene metallization'2006 7,060,132'Method and apparatus of growing a thin film'2006 7,034,397'Oxygen bridge structures and methods to form oxygen bridge structures'2006 7,030,401'Modular substrate measurement system'2006 7,018,504'Loadlock with integrated pre-clean chamber'2006 6,962,859'Thin films and method of making them'2005 6,957,690'Apparatus for thermal treatment of substrates'2005 6,936,535'Copper interconnect structure having stuffed diffusion barrier'2005 6,933,225'Graded thin films'2005 6,924,463'Pyrometer calibrated wafer temperature estimator'2005 6,900,877'Semiconductor wafer position shift measurement and correction'2005 6,893,507'Self-centering wafer support system'2005 6,861,334'Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition'2005 6,831,315'Conformal thin films over textured capacitor electrodes'2004 6,820,570'Atomic layer deposition reactor'2004 6,794,314'Method of forming ultrathin oxide layer'2004 6,780,704'Conformal thin films over textured capacitor electrodes'2004 6,764,546'Apparatus and method for growth of a thin film'2004 6,759,325'Sealing porous structures'2004 6,749,687'In situ growth of oxide and silicon layers'2004 6,727,169'Method of making conformal lining layers for damascene metallization'2004 6,720,531'Light scattering process chamber walls'2004 6,708,700'Cleaning of semiconductor processing chambers'2004 6,703,708'Graded thin films'2004 6,704,496'High temperature drop-off of a substrate'2004 6,699,783'Method for controlling conformality with alternating layer deposition'2004 6,686,271'Protective layers prior to alternating layer deposition'2004 6,596,973'Pyrometer calibrated wafer temperature estimator'2003 6,564,810'Cleaning of semiconductor processing chambers'2003 6,544,900'In situ dielectric stacks'2003 6,540,837'Quartz wafer processing chamber'2003 6,534,395'Method of forming graded thin films using alternating pulses of vapor phase reactants'2003 6,521,503'High temperature drop-off of a substrate'2003 6,511,539'Apparatus and method for growth of a thin film'2003 6,500,742'Construction of a film on a semiconductor wafer'2002 6,492,283'Method of forming ultrathin oxide layer'2002 6,482,733'Protective layers prior to alternating layer deposition'2002 6,454,865'Low mass wafer support system'2002 6,444,036'Construction of a film on a semiconductor wafer'2002 6,435,809'Dual arm linear hand-off wafer transfer assembly'2002 6,435,799'Wafer transfer arm stop'2002 6,420,864'Modular substrate measurement system'2002 6,383,330'Quartz wafer processing chamber'2002 6,368,051'Multi-position load lock chamber'2002 6,354,791'Water lift mechanism with electrostatic pickup and method for transferring a workpiece'2002 6,348,420'Situ dielectric stacks'2002 6,340,415'Method and apparatus for enhancing a sputtering target\'s lifetime'2002 6,325,858'Long life high temperature process chamber'2001 6,318,957'Method for handling of wafers with minimal contact'2001 6,293,749'Substrate transfer system for semiconductor processing equipment'2001 6,284,048'Method of processing wafers with low mass support'2001 6,264,812'Method and apparatus for generating a plasma'2001 6,263,587'Degassing method using simultaneous dry gas flux pressure and vacuum'2001 6,251,758'Construction of a film on a semiconductor wafer'2001 6,242,718'Wafer holder'2001 6,232,196'Method of depositing silicon with high step coverage'2001 6,228,229'Method and apparatus for generating a plasma'2001 6,209,220'Apparatus for cooling substrates'2001 6,183,183'Dual arm linear hand-off wafer transfer assembly'2001 6,162,299'Multi-position load lock chamber'2000 6,158,951'Wafer carrier and method for handling of wafers with minimal contact'2000 6,152,074'Deposition of a thin film on a substrate using a multi-beam source'2000 6,121,061'Method of processing wafers with low mass support'2000 6,113,698'Degassing method and apparatus'2000 6,108,937'Method of cooling wafers'2000 6,068,441'Substrate transfer system for semiconductor processing equipment'2000 6,039,074'Pressure-induced shut-off valve for a liquid delivery system'2000 6,013,159'Particle trap in a magnetron sputtering chamber'2000 5,989,999'Construction of a tantalum nitride film on a semiconductor wafer'1999 5,827,408'Method and apparatus for improving the conformality of sputter deposited films'1998 5,755,936'Temperature clamped anti-contamination and collimating devices for thin film processes'1998 5,725,740'Adhesion layer for tungsten deposition'1998 5,598,622'Temperature clamping method for anti-contamination and collimating devices for thin film processes'1997 5,460,689'High pressure plasma treatment method and apparatus'1995 5,431,799'Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency'1995 5,419,029'Temperature clamping method for anti-contamination and collimating devices for thin film processes'1995 5,040,049'Semiconductor device and method of manufacturing a semiconductor device'1991 4,908,331'Method of manufacturing a semiconductor device by depositing metal on semiconductor maintained at temperature to form silicide'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–1998Based in San Jose, CA, US· patent location history

1995–2002Patents assigned to APPLIED MATERIALS INC (19)· patent assignee history

1998–2012Based in Phoenix, AZ, US· patent location history

2000–2013Patents assigned to ASM INC (51)· patent assignee history

2001–2021Based in Bilthoven, NL· patent location history

2002–2004Patents assigned to ASM MICROCHEMISTRY OY (4)· patent assignee history

2004–2013Patents assigned to ASM INT (22)· patent assignee history

2015–2021Patents assigned to ASM IP HOLDING BV (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM INC	51	2000–2013
ASM INT	22	2004–2013
APPLIED MATERIALS INC	19	1995–2002
ASM IP HOLDING BV	4	2015–2021
ASM MICROCHEMISTRY OY	4	2002–2004

Locations

Location	Patents	Span
Bilthoven, NL	65	2001–2021
Phoenix, AZ, US	38	1998–2012
San Jose, California, US	8	1990–1998