Inventor
Ming-Han Lee
Inventor
Taipei, TW
Overview
Patents· 56 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1032%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10DInorganic electric semiconductor devices11%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
H03MCoding2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
C23CCoating metallic material1%
C23FNon-mechanical removal of metallic material from surface1%
PatentTitleYear
10,879,115Semiconductor device and forming method thereof202010,763,211Semiconductor device and manufacturing method thereof202010,741,493Interconnection structure and method for forming the same202010,714,424Method of forming metal interconnection202010,651,279Semiconductor interconnect structure having graphene-capped metal interconnects202010,535,559Semiconductor interconnect structure having a graphene barrier layer202010,510,657Semiconductor device with interconnecting structure and method for manufacturing the same201910,453,740Interconnect structure without barrier layer on bottom surface of via201910,319,632Semiconductor interconnect structure having a graphene barrier layer201910,269,706Semiconductor device and manufacturing method thereof201910,163,753Method for forming interconnect structure of semiconductor device201810,163,786Method of forming metal interconnection201810,163,700Method for forming conductive structure using polishing process201810,163,698Interconnect structure and manufacturing method thereof201810,164,018Semiconductor interconnect structure having graphene-capped metal interconnects201810,141,260Interconnection structure and method for forming the same201810,121,698Method of manufacturing a semiconductor device20189,972,529Method of forming metal interconnection20189,898,983'Source driving device with 3 types of gate oxide layer'20189,842,767'Method of forming an interconnection'20179,818,644'Interconnect structure and manufacturing method thereof'20179,728,503'Via pre-fill on back-end-of-the-line interconnect layer'20179,728,485'Semiconductor device with interconnect structure having catalys layer'20179,721,894'Semiconductor device and manufacturing method thereof'20179,721,887'Method of forming metal interconnection'20179,640,431'Method for via plating with seed layer'20179,613,854'Method and apparatus for back end of line semiconductor device processing'20179,613,856'Method of forming metal interconnection'20179,548,241'Semiconductor device metallization systems and methods'20179,530,737'Semiconductor device and manufacturing method thereof'20169,496,170'Interconnect having air gaps and polymer wrapped conductive lines'20169,490,205'Integrated circuit interconnects and methods of making same'20169,484,302'Semiconductor devices and methods of manufacture thereof'20169,324,608'Method for via plating with seed layer'20169,318,364'Semiconductor device metallization systems and methods'20169,318,439'Interconnect structure and manufacturing method thereof'20169,281,263'Interconnect structure including a continuous conductive body'20169,269,668'Interconnect having air gaps and polymer wrapped conductive lines'20169,219,033'Via pre-fill on back-end-of-the-line interconnect layer'20159,142,505'Method and apparatus for back end of line semiconductor device processing'20159,054,163'Method for via plating with seed layer'20159,034,756'Integrated circuit interconnects and methods of making same'20159,006,095'Semiconductor devices and methods of manufacture thereof'20158,749,060'Method of semiconductor integrated circuit fabrication'20148,735,278'Copper etch scheme for copper interconnect structure'20148,106,512'Low resistance high reliability contact via and metal line structure for semiconductor device'20128,013,445'Low resistance high reliability contact via and metal line structure for semiconductor device'20117,782,222'Voltage regulating power supply for noise sensitive circuits'20107,714,555'Switching regulation device and related method with over-current protection'20107,714,756'Digital-to-analog converter'20107,714,755'Dynamic bias control circuit and related apparatus for digital-to-analog converters'20107,701,370'Current output circuit with bias control and method thereof'20107,651,943'Forming diffusion barriers by annealing copper alloy layers'20107,498,789'Switching regulator with over-current protection'20097,402,988'Switching regulator'20084,915,776'Process for etching copper with ammoniacal etchant solution and reconditioning the used etchant solution'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2020Based in Taipei, TW· patent location history
2008–2010Patents assigned to REALTEK SEMICONDUCTOR CORP (7)· patent assignee history
2008–2009Based in Hsin-Tien, TW· patent location history
2010Based in Jhubei City, TW· patent location history
2011–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (11)· patent assignee history
2012–2015Patents assigned to LEE HSIANG-HUAN (3)· patent assignee history
2012–2015Patents assigned to LEE MING HAN (3)· patent assignee history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2018Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2015–2020 |
| TAIWAN SEMICONDUCTOR MFG | 11 | 2011–2016 |
| REALTEK SEMICONDUCTOR CORP | 7 | 2008–2010 |
| LEE HSIANG-HUAN | 3 | 2012–2015 |
| LEE MING HANself | 3 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 52 | 1990–2020 |
| Hsin-Tien, TW | 2 | 2008–2009 |
| Hsinchu, TW | 1 | 2018 |
| Jhubei City, TW | 1 | 2010 |