Inventor
Bang Won Oh
Inventor
Kyungki-do, KR
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers46%
F21VFunctional features or details of lighting devices or systems thereof8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
B82YSpecific uses or applications of nanostructures5%
F21KNon-electric light sources using luminescence5%
F21SNon-portable lighting devices5%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted5%
B28DWorking stone or stone-like materials3%
B41JTypewriters3%
F21WIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to uses or applications of lighting devices or systems3%
PatentTitleYear
10,302,256Lighting apparatus and lighting system201910,006,623Lighting device20188,664,687'Nitride semiconductor light-emitting device and process for producing the same'20148,405,103'Photonic crystal light emitting device and manufacturing method of the same'20138,012,779'Gallium nitride-based light emitting diode and method of manufacturing the same'20117,906,785'Vertical type nitride semiconductor light emitting device and method of manufacturing the same'20117,902,544'Nitride semiconductor light emitting device'20117,872,276'Vertical gallium nitride-based light emitting diode and method of manufacturing the same'20117,829,882'Nitride semiconductor light emitting device'20107,695,989'Method of manufacturing vertical gallium-nitride based light emitting diode'20107,573,076'Vertical gallium-nitride based light emitting diode'20097,553,682'Method of manufacturing vertical nitride light emitting device'20097,531,841'Nitride-based semiconductor light emitting device'20097,462,876'Nitride semiconductor light emitting device'20087,436,001'Vertical GaN-based LED and method of manufacturing the same'20087,151,045'Method for separating sapphire wafer into chips using dry-etching'20067,119,375'Light emitting diode and method for manufacturing the same'20067,078,256'Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof'20067,074,652'Method for separating sapphire wafer into chips'20067,012,284'Nitride semiconductor light emitting device and method of manufacturing the same'20066,774,492'Chip package assembly having chip package mounted on printed circuit board'20046,703,677'Submount integrated photodiode and laser diode package using the same'20046,236,102'Chip type thin film capacitor, and manufacturing method therefor'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2010Patents assigned to SAMSUNG ELECTRO MECH (14)· patent assignee history
2001–2019Based in Seoul, KR· patent location history
2004–2014Based in Kyungki-do, KR· patent location history
2008–2011Based in Seongnam, KR· patent location history
2010–2011Patents assigned to SAMSUNG LED CO LTD (5)· patent assignee history
2011Based in Gyeonggi-do, KR· patent location history
2013–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
2013–2014Patents assigned to OH BANG WON (2)· patent assignee history
2014Patents assigned to CHO DONG HYUN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRO MECH | 14 | 2001–2010 |
| SAMSUNG LED CO LTD | 5 | 2010–2011 |
| SAMSUNG ELECTRONICS CO LTD | 4 | 2013–2019 |
| OH BANG WONself | 2 | 2013–2014 |
| CHO DONG HYUN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 14 | 2004–2014 |
| Seongnam, KR | 5 | 2008–2011 |
| Seoul, KR | 3 | 2001–2019 |
| Gyeonggi-do, KR | 1 | 2011 |