Inventor
Hyun Dam Jeong
Inventor
Gyeonggi-do, KR
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds11%
Y10TTechnical subjects covered by former us classification10%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium8%
C09DCoating compositions, e.g. paints, varnishes or lacquers7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing5%
G09BEducational or demonstration appliances5%
G06FElectric digital data processing3%
G06TImage data processing or generation, in general3%
PatentTitleYear
9,514,379'Sensing device and method used for virtual golf simulation apparatus'20169,333,412'Virtual golf simulation apparatus and method and sensing device and method used for the same'20169,333,409'Virtual golf simulation apparatus and sensing device and method used for the same'20169,162,132'Virtual golf simulation apparatus and sensing device and method used for the same'20158,501,595'Thin film containing nanocrystal particles and method for preparing the same'20138,252,883'Organosilicon nanocluster, method of preparing the same and method of forming thin film using the same'20128,053,173'Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer'20117,989,361'Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof'20117,867,574'Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer'20117,750,176'Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound'20107,633,087'Semiconductor thin film using self-assembled monolayers and methods of production thereof'20097,582,718'Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer'20097,576,230'Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer'20097,491,785'Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer'20097,470,634'Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane'20087,338,689'Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same'20087,108,922'Siloxane-based resin and interlayer insulating film formed using the same'20067,019,099'Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same'20066,962,855'Method of forming a porous material layer in a semiconductor device'20056,777,322'Method for fabricating a multi-layered dielectric layer including insulating layer having Si-CH3 bond therein'20046,660,822'Method for forming insulating film between interconnect layers in microelectronic devices'20036,623,711'Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same'20036,485,815'Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2013Patents assigned to SAMSUNG ELECTRONICS CO LTD (18)· patent assignee history
2002–2004Based in Kyungki-do, KR· patent location history
2003–2013Based in Suwon-si, KR· patent location history
2006–2011Based in Gyeonggi-do, KR· patent location history
2012–2016Patents assigned to JEONG HYUN DAM (6)· patent assignee history
2012Based in Seoul, KR· patent location history
2015–2016Patents assigned to GOLFZON CO LTD (4)· patent assignee history
2015–2016Patents assigned to JANG HYUNG WOOK (4)· patent assignee history
2015–2016Patents assigned to PARK HYUN JIN (4)· patent assignee history
2015–2016Based in Daejeon, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 18 | 2002–2013 |
| JEONG HYUN DAMself | 6 | 2012–2016 |
| GOLFZON CO LTD | 4 | 2015–2016 |
| JANG HYUNG WOOK | 4 | 2015–2016 |
| PARK HYUN JIN | 4 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 9 | 2006–2011 |
| Suwon-si, KR | 6 | 2003–2013 |
| Daejeon, KR | 4 | 2015–2016 |
| Kyungki-do, KR | 3 | 2002–2004 |
| Seoul, KR | 1 | 2012 |