Inventor
Hong-Seon Yang
Inventor
Ichon-shi, KR
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10BElectronic memory devices21%
H01LSemiconductor devices8%
G09BEducational or demonstration appliances2%
G01BMeasuring length, thickness or similar linear dimensions1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,586,852Semiconductor device202010,312,345Transistor having a gate with a variable work function and method for manufacturing the same201910,109,717Semiconductor device and method for fabricating the same20189,831,089Method for adjusting effective work function of metal gate20179,153,446'Semiconductor device and method for fabricating the same'20159,064,854'Semiconductor device with gate stack structure'20158,921,171'Method for forming gate structure, method for forming semiconductor device, and semiconductor device'20148,736,017'Semiconductor device and method for fabricating the same'20148,592,899'Transistor having vertical channel'20138,441,079'Semiconductor device with gate stack structure'20138,410,547'Semiconductor device and method for fabricating the same'20138,330,215'Transistor including bulb-type recess channel and method for fabricating the same'20128,319,341'Semiconductor device with gate structure'20128,288,819'Semiconductor device with bulb-type recessed channel and method for fabricating the same'20128,048,742'Transistor including bulb-type recess channel and method for fabricating the same'20118,008,178'Method for fabricating semiconductor device with an intermediate stack structure'20117,968,912'Semiconductor device and method for fabricating the same'20117,915,108'Method for fabricating a semiconductor device with a FinFET'20117,902,614'Semiconductor device with gate stack structure'20117,842,594'Semiconductor device and method for fabricating the same'20107,838,364'Semiconductor device with bulb-type recessed channel and method for fabricating the same'20107,825,014'Method for fabricating semiconductor device'20107,816,209'Method for fabricating semiconductor device'20107,781,333'Semiconductor device with gate structure and method for fabricating the semiconductor device'20107,776,694'Method for fabricating a transistor having vertical channel'20107,687,389'Method for fabricating semiconductor device'20107,687,357'Semiconductor device and method for fabricating the same'20107,338,864'Memory device and method for fabricating the same'20087,145,207'Gate structure of semiconductor memory device'20067,112,486'Method for fabricating semiconductor device by using radical oxidation'20067,045,846'Memory device and method for fabricating the same'20067,029,999'Method for fabricating transistor with polymetal gate electrode'20066,936,529'Method for fabricating gate-electrode of semiconductor device with use of hard mask'20056,716,701'Method of manufacturing a semiconductor memory device'20046,531,372'Method of manufacturing capacitor of semiconductor device using an amorphous TaON'20036,287,910'Method for forming a capacitor using tantalum nitride as a capacitor dielectric'20016,200,877'Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor device'20016,034,778'Method of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the same'20005,893,747'Method of manufacturing a polysilicon film of a semiconductor device'19995,387,539'Method of manufacturing trench isolation'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2001Patents assigned to HYUNDAI ELECTRONICS IND (5)· patent assignee history
1999–2008Based in Kyungki-do, KR· patent location history
2003–2013Patents assigned to HYNIX SEMICONDUCTOR INC (26)· patent assignee history
2005–2015Based in Ichon-shi, KR· patent location history
2012–2014Patents assigned to YANG HONG-SEON (6)· patent assignee history
2012–2013Patents assigned to CHO HEUNG-JAE (5)· patent assignee history
2012–2014Patents assigned to JANG SE-AUG (4)· patent assignee history
2014–2019Based in Beijing, CN· patent location history
2014–2015Based in Gyeonggi-do, KR· patent location history
2018–2020Based in Seongnam-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYNIX SEMICONDUCTOR INC | 26 | 2003–2013 |
| YANG HONG-SEONself | 6 | 2012–2014 |
| CHO HEUNG-JAE | 5 | 2012–2013 |
| HYUNDAI ELECTRONICS IND | 5 | 1995–2001 |
| JANG SE-AUG | 4 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ichon-shi, KR | 20 | 2005–2015 |
| Kyungki-do, KR | 10 | 1999–2008 |
| Beijing, CN | 3 | 2014–2019 |
| Seongnam-si, KR | 2 | 2018–2020 |
| Gyeonggi-do, KR | 2 | 2014–2015 |