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Inventor

Inge G. Fulton

Inventor
Washingtonville, NY, US

Overview

3→
Patents
1987–1992
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests40%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
5,132,765'Narrow base transistor and method of fabricating same'19925,008,207'Method of fabricating a narrow base transistor'19914,666,556'Trench sidewall isolation by polysilicon oxidation'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1991Patents assigned to IBM (2)· patent assignee history
1987–1992Based in Washingtonville, NY, US· patent location history
1992Patents assigned to BLOUSE JEFFREY L (1)· patent assignee history
1992Patents assigned to FULTON INGE G (1)· patent assignee history
1992Patents assigned to LANGE RUSSELL C (1)· patent assignee history
1992Patents assigned to MEYERSON BERNARD S (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM21987–1991
BLOUSE JEFFREY L11992
FULTON INGE Gself11992
LANGE RUSSELL C11992
MEYERSON BERNARD S11992
Locations
LocationPatentsSpan
Washingtonville, New York, US31987–1992