Inventor
Takehito Yoshino
Inventor
Nara, JP
Overview
42→
Patents
1989–2009
Patent span
General tagging of new technological developments
Primary field (CPC Y)
Patents· 42 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
Y02Eprimary
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation16%
Y02PClimate change mitigation technologies in the production or processing of goods11%
C23CCoating metallic material10%
C30BSingle-crystal growth10%
G03GElectrography8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H02SGeneration of electric power by conversion of infrared radiation, visible light or ultraviolet light, e.g. using photovoltaic [pv] modules5%
Y10TTechnical subjects covered by former us classification5%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form3%
PatentTitleYear
7,615,115'Liquid-phase growth apparatus and method'20097,407,547'Liquid-phase growth apparatus and method'20087,175,706'Process of producing multicrystalline silicon substrate and solar cell'20077,118,625'Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal'20067,022,181'Liquid phase growth process, liquid phase growth system and substrate member production method'20067,014,711'Liquid-phase growth apparatus and method'20066,953,506'Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same'20056,951,584'Apparatus for producing semiconductor thin films on moving substrates'20056,872,248'Liquid-phase growth process and liquid-phase growth apparatus'20056,824,609'Liquid phase growth method and liquid phase growth apparatus'20046,802,900'Liquid phase growth methods and liquid phase growth apparatus'20046,639,421'Measuring apparatus and method for measuring characteristic of solar cell'20036,551,908'Method for producing semiconductor thin films on moving substrates'20036,515,218'Photovoltaic element, process for the production thereof, method for removing a cover portion of a covered wire, and method for joining a covered wire and a conductor'20036,350,489'Deposited-film forming process and deposited-film forming apparatus'20026,338,872'Film forming method'20026,273,955'Film forming apparatus'20016,271,462'Inspection method and production method of solar cell module'20016,265,242'Solar cell module and a process for producing said solar cell module'20016,241,839'Continuous vacuum lamination treatment system and vacuum lamination apparatus'20016,184,458'Photovoltaic element and production method therefor'20016,180,868'Solar cell module, solar cell module string, solar cell system, and method for supervising said solar cell module or solar cell module string'20016,169,414'Measuring apparatus and method for measuring characteristic of solar cell'20016,162,986'Solar cell module and method of manufacturing the same'20006,113,732'Deposited film forming apparatus'20005,993,582'Continuous vacuum lamination treatment system and vacuum lamination apparatus'19995,968,274'Continuous forming method for functional deposited films and deposition apparatus'19995,946,587'Continuous forming method for functional deposited films'19995,919,310'Continuously film-forming apparatus provided with improved gas gate means'19995,624,776'Electrophotographic photosensitive member provided with a light receiving layer composed of a non-single crystal silicon material containing columnar structure regions and process for the production thereof'19975,575,855'Apparatus for forming a deposited film'19965,468,521'Method for forming a photoelectric deposited film'19955,382,531'Method for continuously manufacturing a semiconductor device'19955,358,811'Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron'19945,266,116'Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers'19935,087,542'Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used'19924,981,766'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material'19914,954,397'Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography'19904,906,543'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19904,906,542'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19904,886,723'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'19894,882,251'Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2009Patents assigned to CANON KK (42)· patent assignee history
1989–1999Based in Nagahama, JP· patent location history
1997–2009Based in Nara, JP· patent location history
2003–2006Based in Kyoto, JP· patent location history
2003Based in Hiratsuka, JP· patent location history
2007Based in Shiga, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CANON KK | 42 | 1989–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nara, JP | 22 | 1997–2009 |
| Nagahama, JP | 13 | 1989–1999 |
| Kyoto, JP | 5 | 2003–2006 |
| Shiga, JP | 1 | 2007 |
| Hiratsuka, JP | 1 | 2003 |